SST3904T116

The SST3904T116 is a single, N-channel Flash-Erase EEPROM memory device, manufactured by Silicon Storage Technology. This device is designed for use in applications that require a high level of reliability, such as automotive, industrial and consumer applications. This device is designed to provide a high performance solution for storage of program code and data in non-volatile memory systems.

The SST3904T116’s major features include a wide operating temperature range (-40°C to +85°C), low power consumption and fast access times (150 nsec). It also includes an on-chip erase voltage generator, which enables the device to be erased with a single voltage application. This device also contains an internal write protect circuit, which prevents unintentional erasure or programming of stored data. The device is packaged in a TSSOP-16 outline and is also RoHS compliant.

The SST3904T116 is a single, bipolar junction transistor (BJT) designed to operate in a variety of applications. Its typical application fields include switching and driving of low-level DC and RF signals, level changing of logic signals, and amplification of current and voltage. In addition, it can be used in high-frequency amplifiers, tuned amplifiers, voltage regulators, oscillators and linear applications.

The working principle of the SST3904T116 is based on the operation of a BJT. It is constructed from two p-type and one n-type semiconductor layers, arranged in the form of a junction transistor. This arrangement of the layers allows current to flow between the emitter and collector when a voltage is applied to the base. The amount of current flow between the emitter and collector is determined by the amount of current flowing through the base, allowing the transistor to act as an amplifier or switch.

The SST3904T116 contains a single NPN BJT, allowing it to be used in a variety of applications. NPN transistors are used in a variety of circuits, such as common base, common collector, and common emitter circuits. Common base circuits are used for low-level switching applications, while common collector circuits are used for high-level switching applications. Common emitter circuits are used for amplifying current or voltage.

In summary, the SST3904T116 is a single, N-channel Flash-Erase EEPROM memory device designed for use in a variety of applications that require reliable and fast performance. The device is designed based on a single bipolar junction transistor, allowing it to be used for switching, driving, level conversion, amplification and linear applications. The device is packaged in a TSSOP-16 outline, and is RoHS compliant.