SST39LF010-45-4C-MME-T Allicdata Electronics
Allicdata Part #:

SST39LF010-45-4C-MME-T-ND

Manufacturer Part#:

SST39LF010-45-4C-MME-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 1M PARALLEL 34WFBGA
More Detail: FLASH Memory IC 1Mb (128K x 8) Parallel 45ns 34-W...
DataSheet: SST39LF010-45-4C-MME-T datasheetSST39LF010-45-4C-MME-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST39 MPF™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 20µs
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-WFBGA
Supplier Device Package: 34-WFBGA (6x4)
Base Part Number: SST39LF010
Description

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SST39LF010-45-4C-MME-T is a type of Memory device commonly used in computing applications, specifically Ultra Low Power Temporary Memory.

The SST39LF010-45-4C-MME-T is a 128K x 8 bit CMOS Ultra Low Power Temporary Memory, also known as EPROM, which is electrically programmable but not electrically erasable. It is designed to provide a low cost, high performance solution for non-volatile memory applications.

The device supports both top and bottom coding, selection between one- or two-time programmable, and other functions. It is ideal for applications requiring fast high-speed access and reliable non-volatile memories. It is also used in low-end applications, such as embedded systems, computers, storage devices, and consumer and industrial applications.

The SST39LF010-45-4C-MME-T is designed for low power consumption, high performance and low access time. The device features a 1.8V operating voltage range, which makes it ideal for low power applications. It also offers a low power standby mode and is typically used in battery powered applications, such as portable applications, that require low power standby mode and low access time.

The SST39LF010-45-4C-MME-T has a typical write time of 10ms and a typical erase time of 100ms. It also has a data retention of 10 years at 25°C. It also features a virtually unlimited number of read/write cycles.

The SST39LF010-45-4C-MME-T operates under the working principle of allowing data to be written and erased in blocks of 8 bits. Each byte can be written up to 2 times. Data is written in one operation and erased in two operations. Data is written to the memory with a single pulse, and then can be verified in two-operation cycles. During programming, a pull up resistor connected to the VDD line holds the data to be written while the device is being programmed. After the programming is done, the pull-up resistor is released and the memory cell is recharged.

The SST39LF010-45-4C-MME-T is typically used in battery operated systems and applications that require reliable non-volatile memory. The device is also used in consumer electronics, medical, automotive and industrial applications. The SST39LF010-45-4C-MME-T is especially suitable for high temperature applications due to their low operating temperature range of -55°C to +125°C.

Overall, the SST39LF010-45-4C-MME-T is an excellent device for use in applications that require reliable non-volatile memory and a low power consumption. It is ideal for applications that require low access time, high-speed access and high reliability in order to ensure that data remains intact. The device’s small size, high performance, low power consumption and low cost make it well suited for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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