Allicdata Part #: | SST39LF010-45-4C-MME-T-ND |
Manufacturer Part#: |
SST39LF010-45-4C-MME-T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 1M PARALLEL 34WFBGA |
More Detail: | FLASH Memory IC 1Mb (128K x 8) Parallel 45ns 34-W... |
DataSheet: | SST39LF010-45-4C-MME-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-WFBGA |
Supplier Device Package: | 34-WFBGA (6x4) |
Base Part Number: | SST39LF010 |
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.SST39LF010-45-4C-MME-T is a type of Memory device commonly used in computing applications, specifically Ultra Low Power Temporary Memory.
The SST39LF010-45-4C-MME-T is a 128K x 8 bit CMOS Ultra Low Power Temporary Memory, also known as EPROM, which is electrically programmable but not electrically erasable. It is designed to provide a low cost, high performance solution for non-volatile memory applications.
The device supports both top and bottom coding, selection between one- or two-time programmable, and other functions. It is ideal for applications requiring fast high-speed access and reliable non-volatile memories. It is also used in low-end applications, such as embedded systems, computers, storage devices, and consumer and industrial applications.
The SST39LF010-45-4C-MME-T is designed for low power consumption, high performance and low access time. The device features a 1.8V operating voltage range, which makes it ideal for low power applications. It also offers a low power standby mode and is typically used in battery powered applications, such as portable applications, that require low power standby mode and low access time.
The SST39LF010-45-4C-MME-T has a typical write time of 10ms and a typical erase time of 100ms. It also has a data retention of 10 years at 25°C. It also features a virtually unlimited number of read/write cycles.
The SST39LF010-45-4C-MME-T operates under the working principle of allowing data to be written and erased in blocks of 8 bits. Each byte can be written up to 2 times. Data is written in one operation and erased in two operations. Data is written to the memory with a single pulse, and then can be verified in two-operation cycles. During programming, a pull up resistor connected to the VDD line holds the data to be written while the device is being programmed. After the programming is done, the pull-up resistor is released and the memory cell is recharged.
The SST39LF010-45-4C-MME-T is typically used in battery operated systems and applications that require reliable non-volatile memory. The device is also used in consumer electronics, medical, automotive and industrial applications. The SST39LF010-45-4C-MME-T is especially suitable for high temperature applications due to their low operating temperature range of -55°C to +125°C.
Overall, the SST39LF010-45-4C-MME-T is an excellent device for use in applications that require reliable non-volatile memory and a low power consumption. It is ideal for applications that require low access time, high-speed access and high reliability in order to ensure that data remains intact. The device’s small size, high performance, low power consumption and low cost make it well suited for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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