Allicdata Part #: | SST39LF010-45-4C-WHE-ND |
Manufacturer Part#: |
SST39LF010-45-4C-WHE |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 1M PARALLEL 32TSOP |
More Detail: | FLASH Memory IC 1Mb (128K x 8) Parallel 45ns 32-T... |
DataSheet: | SST39LF010-45-4C-WHE Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.488", 12.40mm Width) |
Supplier Device Package: | 32-TSOP |
Base Part Number: | SST39LF010 |
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SST39LF010-45-4C-WHE is a type of memory designed for a variety of applications. It is mainly used for storing data, which can be accessed quickly and easily. This type of memory is often used in embedded systems and applications such as digital signal processing, embedded systems, and even in industrial control. It is also suitable for applications that require high speed, low power consumption and high density.
The working principle of SST39LF010-45-4C-WHE relies on a simple process of storing and retrieving data. It stores the data on its memory cells and is controlled by a simple control logic. The control logic is responsible for controlling the writing and reading operations. The data is then retrieved and written to the cells when the user requires it. The memory cells use CMOS technology, which is low power, fast, and efficient.
The memory cells of SST39LF010-45-4C-WHE are organized in a single row and arranged in four parallel banks. Each bank contains eight cells, which can store up to 256 bytes of data. The memory cells can be programmed with the help of a device called a “programmer”, which is connected to a PC. The programming process involves selecting a specific address on the memory cell, writing the data, and then verifying the correctness of the data. After the data is verified, the programmer can move onto the next address and continue the process.
The read and write operations of the memory cells of SST39LF010-45-4C-WHE are controlled by chip select and read/write commands. The memory cells can be addressed using both the “6” and “7” address lines. When the read/write command is issued, the chip select line is activated and the memory cell is accessed. The data is then either written to or read from the memory cell depending on the command that was issued.
SST39LF010-45-4C-WHE is primarily used in industrial control applications, digital signal processing, and embedded systems that require high speed, low power consumption, and high data density. It is also suitable for applications that require a large amount of data storage, such as data logging, image processing and radar. The advantages of using SST39LF010-45-4C-WHE over other memory types include its small size, low cost, and fast access times.
The specific data is subject to PDF, and the above content is for reference
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