SST39LF020-45-4C-MME

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SST39LF020-45-4C-MME memory belongs to the nonvolatile Flash Memory type. It is a single-chip CMOS 32K x 8 bit low voltage version (2.7V - 3.6V) Flash memory. It is a single-chip Flash Memory with an organized application field and it can be directly connected to a processor’s bus.

The SST39LF020-45-4C-MME application field involves a wide range of applications where flexibility and low power are the key requirement. It is suitable for applications such as consumer electronics, industrial computers, programmable controllers, embedded computer systems and medical electronics.

The working principle behind the SST39LF020-45-4C-MME memory revolves around the memory cell structure and its key features. Its memory cell structure is dual gate with a floating gate stacked on top of an access gate, both of which are connected to a single bit line. This allows the dual gate to act as both a memory cell and a decoder/driver.

The most notable feature of the SST39LF020-45-4C-MME memory is its low supply voltage. With a voltage range of 2.7V - 3.6V, it offers high immunity to power supply noise and high data retention. Additionally, the product is designed to meet the requirements of a variety of international solid-state reliability standards, including MIL-STD-883 and JEDEC standards.

The memory cell is organized into four banks in which each bank can be used independently. Each bank contains 8K x 8 bits of memory. Each bank is divided into 512 pages of 512 x 8 bits each. This allows for fast access times and great flexibility in configuring the memory. The memory offers both sequential and random access operations, making it ideal for use in applications such as data storage and code execution.

The SST39LF020-45-4C-MME memory also offers pro-grammable write protection. This feature allows the user to define a range of memory which can be written or locked against writing. This feature is essential for applications such as system code which may require protection against being accidentally erased or modified.

Lastly, the SST39LF020-45-4C-MME memory also offers burst write capability. This feature allows sequential data writes, with only the first write instruction needed to trigger a cascading series of burst data transfers. The power efficient design results in fast programming and a low standby current.

The SST39LF020-45-4C-MME memory is clearly a very versatile and powerful tool for nonvolatile storage applications. Its low voltage operation, protection against noise and data retention, and its burst write capability make it an excellent choice for a wide variety of applications.

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