SST39LF020-55-4C-MME

Series:	SST39 MPF™
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	2Mb (256K x 8)
Write Cycle Time - Word, Page:	20µs
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	34-WFBGA
Supplier Device Package:	34-WFBGA (6x4)
Base Part Number:	SST39LF020

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Memory: SST39LF020-55-4C-MME Application Field and Working Principle

SST39LF020-55-4C-MME is a kind of memory chip, which is widely used in a variety of applications. It is designed for high speed and performance, with a wide operating temperature range, up to 125°C. Rolling furnaces, LCD flat panel displays, digital satellite systems, game consoles and automotive infotainment applications are some examples that use this chip. It is also used in many embedded applications and in storage systems that require high-speed, high-capacity memory.The SST39LF020-55-4C-MME chip is made up of 16-megabit DRAM memory chips. It is fabricated using surface-mount technology, making it ideal for applications that require a fast, reliable and dense storage capability. The simple construction of the SST39LF020-55-4C-MME makes it suitable for high-reliability applications like aerospace, military, medical and automotive industries. The chip is also one of the most cost-effective solutions for many applications, as it is easy to use, makes it suitable for a variety of applications.At the heart of the SST39LF020-55-4C-MME is the memory cell array which is composed of one million four hundred forty thousand individual DRAM cells, with each cell being composed of four gates (four transistors). The memory cell array provides a wide range of features, including fast access time, power-efficiency, low power consumption and storability robustness. The DRAM cell also has a very low leakage current, which allows for a wide range of operations.The SST39LF020-55-4C-MME chip also integrates two Error Detection and Correction (EDAC) circuits, the De-noising, Adjustment and Detection (DAD) circuit and the Error Log Register (ELR). The EDAC circuits provide additional protection against memory cell errors which helps improving system reliability. The DAD and ELR circuits add additional features, such as advanced diagnostics, traceability for error reporting, and can detect and correct multiple types of errors.The SST39LF020-55-4C-MME is assembled in a ball grid array (BGA) package, which provides several advantages such as: increased performance due to the increased densities, flexible pin-out configurations and low thermal resistance. Additionally, the BGA package provides mechanical and thermal protection, making it suitable for use in harsh environments.The SST39LF020-55-4C-MME chip works in a synchronous mode, meaning that it will respond only when it has been actively triggered. The memory access timing can be adjusted by setting the appropriate timings. The chip is capable of accessing a single memory location in as little as 30 nanoseconds (ns).In addition to its fast access time, SST39LF020-55-4C-MME also features a wide temperature range, from -55°C to +125°C, making it suitable for conditions ranging from very cold to very hot.Overall, the SST39LF020-55-4C-MME chip is an ideal choice for applications that require a fast, reliable and dense memory storage option. With its wide temperature range, low power consumption and high reliability, it has become the preferred memory solution for many applications.SST39LF020-55-4C-MME is designed for high-speed and performance. It integrates two EDAC circuits and a ball grid array (BGA) package, which provide multiple advantages such as increased densities and flexible pin-out configurations as well as low thermal resistance and mechanical/thermal protection. On top of this, the chip also features a wide operating temperature range, allowing it to be used in extremely cold or hot environments. Moreover, it is capable of accessing a single memory location in as little as 30 ns. In addition, its high reliability and low power consumption make it an ideal choice for applications that require fast, reliable, and dense memory storage.

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