Allicdata Part #: | SST39LF020-55-4I-MME-ND |
Manufacturer Part#: |
SST39LF020-55-4I-MME |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 2M PARALLEL 34WFBGA |
More Detail: | FLASH Memory IC 2Mb (256K x 8) Parallel 55ns 34-W... |
DataSheet: | SST39LF020-55-4I-MME Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (256K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-WFBGA |
Supplier Device Package: | 34-WFBGA (6x4) |
Base Part Number: | SST39LF020 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SST39LF020-55-4I-MME is an advanced and versatile 4Mbit, 3.3V EEPROM/Flash Memory device. It is categorized as a type of Memory device. The device has many applications like mobile phones, digital cameras, gadgets, game-players, PDAs, and many more. It is also suitable for a variety of applications that require data storage and retrieval.
The working principle of this device is based on electrically erasable programmable read-only memory (EEPROM). The device is programmed by applying a voltage across its write enable terminals. This voltage induces a charge on a cell and writes to that cell. The device is then locked from further programming and can only be erased again by applying a high voltage.
The SST39LF020-55-4I-MME has many features to suit different application requirements. It is a low-power device with data retention of up to 20 years and provides high system immunity in noisy environments. The device also features high erasing speed, fast programming time, high endurance, low power consumption and is suitable for data retention applications.
The device utilizes a wide operating voltage range (1.8 volts up to 5.5 volts). It can be used in both 8-bit and 16-bit application systems. The device also has an internally electrically erasable non-volatile memory for fast and efficient data storage. The device can support data bus widths up to 16 bits and byte writes up to 32 bytes.
The device is rugged and reliable, making it suitable for use in even tough environments. It has an operating temperature range from -40 ˚C to +85 ˚C and can tolerate an intensive humidity range from 0% to 95%. The device is available in a wide range of packages to suit customer requirements including SOP, SOJ, SSOP and many others.
In addition, the device contains system or block protection features. These features provide features such as error correction. It also offers data protection so that data stored inside the device can be secured and protected from accidental deletion.
The SST39LF020-55-4I-MME is an ideal Memory device for embedded system applications. Its key features address many critical application requirements including low power consumption, reliable operation in harsh environments, fast data read and write speed, long data retention, low system immunity in noisy environment, and block protection.
The specific data is subject to PDF, and the above content is for reference
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