SST39LF040-55-4I-B3KE Allicdata Electronics
Allicdata Part #:

SST39LF040-55-4I-B3KE-ND

Manufacturer Part#:

SST39LF040-55-4I-B3KE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M PARALLEL 48TFBGA
More Detail: FLASH Memory IC 4Mb (512K x 8) Parallel 55ns 48-T...
DataSheet: SST39LF040-55-4I-B3KE datasheetSST39LF040-55-4I-B3KE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST39 MPF™
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA
Base Part Number: SST39LF040
Description

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SST39LF040-55-4I-B3KE is a type of memory flash chip; it belongs to the small-capacity sector erase Flash EPROM. With its excellent features, the chip is widely used in many sectors. In this article, we will discuss the application field and working principle of SST39LF040-55-4I-B3KE.

SST39LF040-55-4I-B3KE is a non-volatile memory device which is mainly used for programming and storing data. It is capable of storing up to 4 Mbyte or 32 Mbits of data. Its physical size is not too big, allowing for high speed data transfer and greater reliability. In addition, the chip has superior read/write performance, making it suitable for embedded systems and some digital audio players.

The primary applications of SST39LF040-55-4I-B3KE include: embedded systems, data storage, boot code storage and document storage. It is also used in a wide range of consumer electronics such as digital cameras, MP3 Players, PEDs, industrial control equipment and some communication equipment. Furthermore, it is also used in automotive applications such as vehicle navigation systems, audio systems and airbag deployment.

The working principle of SST39LF040-55-4I-B3KE is based on the charge-backed floating gate memory cell design. The memory cells are arranged in a grid array which is separated into two groups. The first group is comprised of 16K words which can be accessed in parallel for faster operations and reads. The second group is comprised of 32K words, which are accessed in a serialized approach with every address indicating a single word.

In order to program or write data to this flash memory chip, a voltage of 12V is required. This voltage is applied to both the gates of the memory cell, to erase the existing data and rewrite new data. The erase operation can be done on a single cell, multiple cells or the entire chip. The write operation is performed by applying a voltage to the memory word line and toggling the write line, which causes data to be written on the cells.

In addition, it is important to note that the erase and write operations require special software and hardware which can be purchased separately, depending on the specific requirements. The software is necessary in order to program the chip correctly. It is also important to note that the SST39LF040-55-4I-B3KE is prone to data corruption or data loss when power is removed from the chip.

To summarize, SST39LF040-55-4I-B3KE is a type of memory flash chip that is mainly used for programming and storing data. It is capable of storing up to 4 Mbyte or 32 Mbits of data. Its physical size is not too big, allowing for high speed data transfer and greater reliability. The primary application fields of this memory chip include embedded systems, data storage, boot code storage and document storage. In addition, the chip works on the basis of the charge-backed floating gate memory cell design and requires a voltage of 12V to program and write data to the chip. Finally, it is important to note that special software and hardware are required for programming or writing data to the chip.

The specific data is subject to PDF, and the above content is for reference

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