SST39LF200A-45-4C-B3KE

SST39LF200A-45-4C-B3KE is a type of nonvolatile memory, also known as NVRAM (Nonvolatile Random Access Memory). It is an integrated circuit that utilizes EEPROM (Electronically Erasable Programmable Read Only Memory) to store data, even when power is turned off. Nonvolatile memory is ideal for applications that need to keep data over long periods of time but require them to remain secure.

SST39LF200A-45-4C-B3KE applications range from automotive, consumer electronics, medical and industrial equipment, to computers and military/aerospace systems. In automotive applications, they are used to provide automotive manufacturers with solutions that are cost effective and offer high speed. In consumer electronics, they are used to store OEM (Original Equipment Manufacturer) configuration settings so that device operation is customized for each user. In medical and industrial equipment, they are used to store critical patient or process data while the device is in standby mode.

The working principle of SST39LF200A-45-4C-B3KE makes use of EEPROM cell arrays, each made up of a circuit containing a single transistor and two capacitor networks. These cell arrays are manufactured using CMOS (Complementary Metal Oxide Semiconductor) technology and arranged in a rectangular array of rows and columns. When a voltage is applied to a specific row or column, the cell is selected and the data can be written or read from it.

SST39LF200A-45-4C-B3KE has a wide array of features that makes it a great option for many types of applications. It is capable of writing and reading data at a very high speed, making it ideal for high-performance applications. It has an additional feature of reliability, boasting an endurance of more than 100 million cycles and data retention potential of 10 years. It also has a low power consumption, with a standby current of just 5µA.

In conclusion, SST39LF200A-45-4C-B3KE is a type of Nonvolatile Memory designed for a wide range of applications. Its working principle utilizes EEPROM cell arrays, making use of CMOS technology to store and access data. It features a high speed in writing and reading, high endurance and low power consumption, making it suitable for many types of applications.