SST39LF402C-55-4C-B3KE Allicdata Electronics
Allicdata Part #:

SST39LF402C-55-4C-B3KE-ND

Manufacturer Part#:

SST39LF402C-55-4C-B3KE

Price: $ 0.53
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M PARALLEL 48TFBGA
More Detail: FLASH Memory IC 4Mb (256K x 16) Parallel 55ns 48-...
DataSheet: SST39LF402C-55-4C-B3KE datasheetSST39LF402C-55-4C-B3KE Datasheet/PDF
Quantity: 1000
960 +: $ 0.47370
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Series: SST39 MPF™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10µs
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)
Base Part Number: SST39LF402C
Description

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SST39LF402C-55-4C-B3KE is a type of memory integrated circuit commonly referred to as an EEPROM, or Electrically Erasable Programmable Read-Only Memory. It is used in a variety of applications, ranging from data storage to microcontroller code storage. EEPROM memory is used to store data in a non-volatile manner; that is, the data stored in the memory remains intact even without power. EEPROM memory has the capability of being re-written, unlike typical ROM devices which can typically only be written to once.

The memory array in the SST39LF402C-55-4C-B3KE consists of 8K words of 8 bits each. This device has a write cycle time of 5ms, and an access time of 55ns. It can operate from 3.0V to 3.6V. It has a 0.3µm CMOS process, packaged in a 44-Pin Plastic SOIC package. The SST39LF402C-55-4C-B3KE is preferable for applications which require high-speed data transfers, and for applications that require low power consumption.

SST39LF402C-55-4C-B3KE has a wide range of application fields. One of its primary applications is in data storage and recall systems. This type of memory is ideal for use in embedded systems such as medical and industrial equipment. It is also widely used in automotive applications such as airbag systems and electronic control units. The ability to write, erase, and reprogram data makes this type of memory ideal for use in other applications such as scientific research, factory automation and field maintenance.

The SST39LF402C-55-4C-B3KE is based on the principle of Electronically Re-programmable Memory (ERM). ERM works by storing data in an array of memory cells, each of which are constructed from an electronically re-programmable transistor and a capacitor. The transistor and the capacitor are connected to the address bus which supplies the command signal to specify the information to be read or written. When a command signal is applied to the address bus, it will activate the corresponding memory cell, thus allowing the reading or writing of data.

This type of memory is fast and economical and is suitable for a variety of applications. It is ideal for use in portable devices and consumer electronics, as well as in industrial, automotive, and medical applications. The ability to overwrite existing data, while retaining the original data, makes it an ideal choice for applications which require frequent rewriting of data. The SST39LF402C-55-4C-B3KE also offers fast write-cycle times and low power consumption, making it a preferred choice for applications that require low power consumption and fast data processing.

The specific data is subject to PDF, and the above content is for reference

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