Allicdata Part #: | SST39LF512-45-4C-NHE-ND |
Manufacturer Part#: |
SST39LF512-45-4C-NHE |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 512K PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 512Kb (64K x 8) Parallel 45ns 32-... |
DataSheet: | SST39LF512-45-4C-NHE Datasheet/PDF |
Quantity: | 1000 |
Series: | SST39 MPF™ |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | SST39LF512 |
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The SST39LF512-45-4C-NHE is a 4 megabit CMOS Flash memory manufactured by Microchip technology, specializing in discrete and analog semiconductor solutions. It is a type of non-volatile random-access memory (NVRAM). This means it can store bits of data without the need for power. It can be used for data retention in applications where memory hold is required such as computers, cell phones, embedded systems, automotive accessories and more.
The SST39LF512-45-4C-NHE memory device is highly reliable, using a 3V operating voltage, and is offered in a 52-pin plastic quad-flat no-lead wire-bond package. Its all-CMOS architecture solves the design problems of external protection and anti-fuse technologies.
As a Flash memory, the SST39LF512-45-4C-NHE is a type of non-volatile memory which means that the data stored in it remains intact even when power is removed. This allows it to store data even after the system has been turned off, allowing you to keep important information such as the system settings or user data between boot ups.
The working principle of the SST39LF512-45-4C-NHE is based on electrons tunneling through an oxide layer. This tunnel effect reduces the reliability of the memory cells as electrons can be added or removed from the oxide layer, with the effect of editing specific bits of data. Therefore, more advanced technologies such as triple oxide layer and SONOS memory technologies have been developed to increase the level of reliability. The SONOS technology uses nor-logic programming to assure a high degree of data retention and it is currently used for wide range of applications.
The SST39LF512-45-4C-NHE Flash memory is widely used in various applications. It is popular in mobile devices such as mobile phones, digital cameras and digital music players. It is also used in automotive systems, medical equipment, industrial robots, point-of-sale systems and many other applications.
The SST39LF512-45-4C-NHE is best suited for applications that require high-reliability and long-term data storage. Due its non-volatile nature and low power usage, it is the preferred choice for applications where data needs to be retained even when power is removed. Furthermore, the device features a read-only mode for security purposes and increased data integrity.
In conclusion, the SST39LF512-45-4C-NHE is a 4 megabit CMOS Flash memory with a high degree of reliability and long-term data storage capabilities. It is widely used in a variety of applications from mobile devices to industrial robots. The memory device features a high degree of data integrity due to its nor-logic programming and low power usage, making it the ideal solution for data retention in applications where memory hold is required.
The specific data is subject to PDF, and the above content is for reference
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