Allicdata Part #: | SST39SF010A-45-4I-NHE-T-ND |
Manufacturer Part#: |
SST39SF010A-45-4I-NHE-T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 1M PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 1Mb (128K x 8) Parallel 45ns 32-P... |
DataSheet: | SST39SF010A-45-4I-NHE-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | SST39SF010A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SST39SF010A-45-4I-NHE-T is a type of memory. It is a 128 megabit CMOS 3.0 Volt-only Flash Memory, manufactured by Microchip Technology Inc. The memory is presented in a 44-pin TSOP (Thin-Small Outline Package) with an organization of 16M x 8. Its read cycle time is 70 ns, byte write cycle time is 2.0 μs and sector erase cycle time at 4.0 Seconds.
SST39SF010A-45-4I-NHE-T is a great choice for embedded designs because it offers flexible functions, high performance, and compact structure. It provides several different commands, allows users to write/erase whole chip/sector/block/bytes and monitor/verify both erased and programmed bits.
This memory device is usually applied in automotive and industrial control systems, medical equipment, home appliances, security systems, telecommunication systems, etc. It is also applicable to various applications such as data storage, code shadowing and boot-up with absolute protection agains write and erasure.
SST39SF010A-45-4I-NHE-T operates by allowing the user to address signals which are accurate to the bits and bytes of the memory. Address lines found on the device allows for paging from one memory address to another, making it easier to physically organize the memory. The data bus shares the same pins as the address, allowing the user to initially access an address, both read and write all of the bytes on that address, and then move to the next one. Once the data has been read the device can take several actions, depending on the command issued.
During the read cycle, the selected address and data are latched on the rising edge of CS and both can be held high or low while waiting for the next command. The write cycle is initiated by first asserting WEN when CS is low and inputting data on the data bus. Both address and data are latched on the rising edge of CS and the write process starts immediately. When the write process is finished, the device generates the Write-End signal to inform that write process is complete.
SST39SF010A-45-4I-NHE-T has a sector protection feature which prevents accidental sector erase or block write operations. This memory device supports an array of commands which includes Write Status Register, Page Programming, and Data Polling. It also includes a few unique command functions like extra commands for mass erase and for sector protection.
SST39SF010A-45-4I-NHE-T is a hi-performance, economical and dependable memory device. Its innovative designs widens the range of its applicable applications, making it the right choice for a broad range of applications such as automotive and industrial control systems, medical equipment, home appliances, security systems, and telecommunication systems. It provides a reliable on-chip memory source with high performance and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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