SST39SF020A-55-4I-NHE

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SST39SF020A-55-4I-NHE is an amplified non-volatile memory, and is part of the 39SF family from Silicon Storage Technology, Inc. It can store and retrieve up to 2 million bits of data and can be used in applications such as automotive, industrial and consumer products.

The device can be configured with either a 4-bit or 8-bit multiplexed addressing interface. The 4-bit interface features a 22-bit address bus, while the 8-bit interface features a 21-bit address bus. This device also features a 1kB page size and supports multiple programming modes, including sequential, random, sequential erase and block erase. There is also a status register which allows for register-controlled errors, such as uncorrectable errors, chip erase failures, program failure and command errors.

The working principle of the SST39SF020A-55-4I-NHE is based on a type of memory known as Flash memory. This type of memory is made up of many small cells, each storing a single bit of information. These cells can be programmed and erased using a small electric pulse. This type of memory is non-volatile, meaning it is capable of retaining data even when the power is turned off.

The SST39SF020A-55-4I-NHE can be used in a wide range of applications, such as digital cameras, personal computers, MP3 players, personal digital assistants and automotive systems. With its fast read access time of 40 nanoseconds and high write speed of 200-400KB/s, the device can be used to store and retrieve large amounts of data quickly. Additionally, it requires very low power consumption, making it ideal for battery-powered applications.

Due to its small size and low power requirements, the SST39SF020A-55-4I-NHE is also appropriate for a variety of embedded applications. Embedded systems utilize very small, specialized processors and memory components to control the basic functions of a system. Its fast read access time and low power requirements make it an ideal solution for embedded applications.

The SST39SF020A-55-4I-NHE is an ideal solution for applications requiring fast data access and high memory density. The device can store a maximum of 2 million bits of data, has a fast read access time of 40 nanoseconds, and a write speed of 200-400KB/s. It also has low power requirements, making it suitable for battery-powered devices and embedded systems. The device is available in both a 4-bit and 8-bit multiplexed addressing interface, making it suitable for a wide range of applications.

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