SST39VF010-70-4I-NHE

Series:	SST39 MPF™
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	20µs
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC
Base Part Number:	SST39VF010

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Introduction to SST39VF010-70-4I-NHE

The SST39VF010-70-4I-NHE is a 4Mbit (512K-byte) capable, high-speed, low power, and low-voltage (2.7V to 3.6V) CMOS SRAM that operates at clock rates up to 66MHz. This device is well suited for a variety of memory storage applications in which cost, performance and power dissipation are of primary concern.

Application Field of SST39VF010-70-4I-NHE

The SST39VF010-70-4I-NHE is well suited for a variety of memory storage applications, including the following:

• Embedded systems
• Automotive applications
• Television receivers
• Computer systems
• digital video recorders/player sets
• Digital still cameras
• Industrial control

The memory density, data rate, and low-power operation of the SST39VF010-70-4I-NHE make it the ideal solution for these applications.

Working Principle of SST39VF010-70-4I-NHE

The SST39VF010-70-4I-NHE is a 4Mbit (512K-byte) capable, high-speed, low power, and low-voltage (2.7V to 3.6V) CMOS SRAM that operates at clock rates up to 66MHz. The memory is organized as 32K-word x 16-bit and is internally configured as a single-port SRAM. The main purpose of the SST39VF010-70-4I-NHE is to store and provide fast access to data. The device has 15 address pins (A0 to A14) and 16 data pins (D0 to D7) used to access data stored in memory. The address pins are used to select the memory location while the data pins are used to read or write the data into the memory. The device also has several control pins such as RD# and WE#. These pins are used to control the READ and WRITE operation of the memory. The SST39VF010-70-4I-NHE also has a self-timed control logic circuit for asynchronous READ and WRITE operations which allows for fast access time to data and eliminates the need for external devices to generate address and control signal. The device is also available in a Pb-free package and is manufactured using very low voltage CMOS technology that makes it more reliable and efficient.

Conclusion

The SST39VF010-70-4I-NHE is a 4Mbit (512K-byte) capable, high-speed, low power, and low-voltage (2.7V to 3.6V) CMOS SRAM that operates at clock rates up to 66MHz. This device is well suited for a variety of memory storage applications in which cost, performance and power dissipation are of primary concern. Its wide range of applications, high speed, low power, and low voltage operation make the SST39VF010-70-4I-NHE an ideal choice for embedded systems, automotive applications, television receivers, computer systems, digital video recorders/player sets, digital still cameras, and industrial control. The device also has a self-timed control logic circuit for asynchronous READ and WRITE operations which allows for fast access to data and eliminates the need for external devices to generate address and control signal.

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