SST39VF020-70-4I-WHE Allicdata Electronics
Allicdata Part #:

SST39VF020-70-4I-WHE-ND

Manufacturer Part#:

SST39VF020-70-4I-WHE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 2M PARALLEL 32TSOP
More Detail: FLASH Memory IC 2Mb (256K x 8) Parallel 70ns 32-T...
DataSheet: SST39VF020-70-4I-WHE datasheetSST39VF020-70-4I-WHE Datasheet/PDF
Quantity: 1040
Stock 1040Can Ship Immediately
Specifications
Series: SST39 MPF™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: SST39VF020
Description

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The SST39VF020-70-4I-WHE is a type of memory. As the name suggests, it stores information in the form of patterns, which makes it resistant to electrical disturbances such as surges or sharp spikes. In addition, it has a wide range of operating temperatures that allows for safe operation in a wide range of environmental conditions.

The SST39VF020-70-4I-WHE memory is commonly used in a variety of applications, including industrial control systems, embedded control systems, automotive systems, and aerospace systems. It is often used in applications that require large memory capacity and fast transfer rates, such as high-speed networking and digital video applications. The device has a wide range of options for accessing data, including Flash and EEPROM technologies, which can be used to store up to 1 MB of data.

The SST39VF020-70-4I-WHE uses a traditional Static RAM (SRAM) core structure, consisting of a number of fixed-delay cells. At each cell, a Read/Write latch is used to store and load data in the bit cell before it is read or written. This allows for quick memory access, improving performance and reducing power consumption. The device also includes a backup SRAM cell structure to provide extra data protection in case of power failure. This ensures that any data stored in the device is not lost during power outages.

The SST39VF020-70-4I-WHE also features a sense-amplifier array that allows for high-speed signal sensing and an error correcting code (ECC) feature that improves the reliability of data storage.

The SST39VF020-70-4I-WHE is capable of operating at speeds up to 70MHz and its electrically erasable programmable read-only memory (EEPROM) technology provides additional data protection. The device is designed to be cost effective, delivering excellent performance without compromising cost. The device is ideal for a variety of embedded applications and industrial control systems.

In general, the SST39VF020-70-4I-WHE is a reliable and versatile memory solution for a wide range of applications. It provides a reliable solution for storing large amounts of data, has a wide range of operating temperatures, and offers fast and reliable performance utilizing its SRAM core. The device also includes ECC and Flash/EEPROM technologies, providing additional data protection. Thanks to its cost-effective manufacturing process, it is an excellent choice for embedded systems and industrial control application.

The specific data is subject to PDF, and the above content is for reference

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