SST39VF200A-70-4C-EKE Allicdata Electronics
Allicdata Part #:

SST39VF200A-70-4C-EKE-ND

Manufacturer Part#:

SST39VF200A-70-4C-EKE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 2M PARALLEL 48TSOP
More Detail: FLASH Memory IC 2Mb (128K x 16) Parallel 70ns 48-...
DataSheet: SST39VF200A-70-4C-EKE datasheetSST39VF200A-70-4C-EKE Datasheet/PDF
Quantity: 2
Stock 2Can Ship Immediately
Specifications
Series: SST39 MPF™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: SST39VF200A
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SST39VF200A-70-4C-EKE is a type of non-volatile memory, with a combination of EEPROM, Flash and SRAM. Its application field and working principle are as follows.

Application Field

The SST39VF200A-70-4C-EKE is suitable for use in applications that require both high speed and long term data storage, such as: computer BIOS, communication system application, industrial control systems and other embedded applications.

It has excellent durability, strong environment adaptability, high reliability and large capacity, so it can be used in harsh environment, and its performance will not be significantly affected.

Working Principle

The SST39VF200A is based on SST’s unique SuperFlash® technology, which uses split-gate memory cells and NAND architecture. It can provide fast read and write times, long data retention and high write endurance. The split-gate design increases the manufacture reliability of each cell, so it can be operated for many years in applications requiring long cycles.

The chip has a write cycle endurance of 100,000 and a data retention of 20 years. In addition, it supports multi-level cell (MLC) operation, which can increase the bits of each cell up to 4 levels, improving the effective density of the memory.

Moreover, an industry-standard Serial Peripheral Interface (SPI) port is used by the chip. This SPI port has four configurable I/O lines, and communicates with the internal memory using two requests: instruction and data. The internal memory can be read and written by configuring registers, and the status register can check the operation status.

The SST39VF200A-70-4C-EKE is a non-volatile memory device that provides a good combination of speed, capacity, reliability and memory flexibility. It is an ideal choice for various embedded applications, and is widely used in computer BIOS and communication systems.

The specific data is subject to PDF, and the above content is for reference

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