Allicdata Part #: | SST39VF512-70-4C-NHE-T-ND |
Manufacturer Part#: |
SST39VF512-70-4C-NHE-T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 512K PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 512Kb (64K x 8) Parallel 70ns 32-... |
DataSheet: | SST39VF512-70-4C-NHE-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | SST39VF512 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an essential part of digital circuits, acting as the “brain” of a digital device. It holds the data, stores instructions, and helps to process information. One type of memory that is commonly found in digital circuits is called SST39VF512-70-4C-NHE-T. In this article, we’ll take a closer look at SST39VF512-70-4C-NHE-T, and discuss its application field as well as working principle.
SST39VF512-70-4C-NHE-T is a NOR Flash memory chip. It has a wide range of applications, from aerospace, industrial and automotive to gaming, communications, and consumer electronics. Its versatile nature makes it suitable for use in a range of devices, including cell phones, digital cameras, radios, television sets, navigation systems, and other digital applications. With its high-speed write and erase controls, SST39VF512-70-4C-NHE-T can meet each type of application’s specifications accurately and efficiently.
Looking at SST39VF512-70-4C-NHE-T’s working principle, the chip is housed in a small rectangular package with gold pins on the underside of the package. Inside, there are several rows and columns of memory cells, each cell consisting of a gate and an injector. The memory cells are able to store both binary data (zero or one) and analog information. The data stored in the cells is accessed by a set of address lines and a data line.
When a write command is issued to the chip, it uses its internal programming algorithm to properly sequence the gates and injectors in each cell. This ensures that the data is written in the memory in a reliable and consistent way. Similarly, when a read command is issued, the internal programming algorithm reads the data stored in each cell, and uses it to generate the appropriate data on the data line. With its high-speed write and read commands, SST39VF512-70-4C-NHE-T is able to provide memory data in a fast and reliable manner.
Finally, SST39VF512-70-4C-NHE-T is protected by an erasable programmable read-only memory (EPROM) that prevents unauthorized access to the chip and makes it impossible to corrupt or erase its contents without specific instructions. This makes the chip highly secure and reliable for use in a variety of applications.
In conclusion, SST39VF512-70-4C-NHE-T is a versatile and reliable memory chip with a wide range of applications from satellites and robots to medical equipment and television sets. It uses a NOR Flash architecture and has an internal programming algorithm for both writing and reading memory data. The chip is protected by an EPROM for secure and reliable operation, making it ideal for a variety of digital applications.
The specific data is subject to PDF, and the above content is for reference
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