Allicdata Part #: | SST39VF512-70-4C-NHE-ND |
Manufacturer Part#: |
SST39VF512-70-4C-NHE |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 512K PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 512Kb (64K x 8) Parallel 70ns 32-... |
DataSheet: | SST39VF512-70-4C-NHE Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | SST39VF512 |
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The SST39VF512-70-4C-NHE is a family of 512K x 8-bit high performance, low power and cost-effective Flash memories manufactured by Silicon Storage Technology, Inc. It is generally used in applications that require fast writes and high-density storage, such as embedded systems, automotive applications, and industrial control systems. In this article, we’ll discuss the application field and working principle of the SST39VF512-70-4C-NHE.
The SST39VF512-70-4C-NHE is designed to store a maximum of 512K x 8bits of data, making it suitable for applications that require high-density storage. The SST39VF512-70-4C-NHE can be used to store images, audio files, or text. It is also often used for storing application programs in embedded systems.
The SST39VF512-70-4C-NHE also offers good write performance. It has a write time of 45us, which is up to 40 times faster than some other commonly used Flash devices. This makes it ideal for applications where fast writes are essential. It is also very power efficient, using less than half the power of other Flash devices.
The SST39VF512-70-4C-NHE is also designed to be reliable, with features like ECC correction, self-timing and wear-leveling, which help extend its lifespan and increase its durability. These features make it ideal for applications where reliability is paramount, such as automotive systems and industrial control systems.
The working principle of the SST39VF512-70-4C-NHE is based on the Flash memory architecture. Flash memory is a form of non-volatile memory, meaning that it retains its stored data even when power is removed. The SST39VF512-70-4C-NHE is based on the Flash architecture, which uses an array of floating-gate transistors arranged in a grid. Each transistor can be electrically programmed to store one bit of data, and the entire array of transistors can be used to store large amounts of information. Data can be read from or written to the memory by applying the appropriate voltage levels to the memory cells.
The SST39VF512-70-4C-NHE is a versatile, high-performance and cost-effective Flash memory device. It is ideal for applications that require fast writes and high-density storage, such as embedded systems, automotive applications, and industrial control systems. Its features, such as ECC correction, self-timing, wear-leveling, and low power consumption make it an excellent choice for reliable and power-efficient applications.
The specific data is subject to PDF, and the above content is for reference
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