Allicdata Part #: | SST39VF512-70-4C-WHE-T-ND |
Manufacturer Part#: |
SST39VF512-70-4C-WHE-T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 512K PARALLEL 32TSOP |
More Detail: | FLASH Memory IC 512Kb (64K x 8) Parallel 70ns 32-... |
DataSheet: | SST39VF512-70-4C-WHE-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP |
Base Part Number: | SST39VF512 |
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The SST39VF512-70-4C-WHE-T is a memory device designated for several applications. It is a Flash memory that offers an array of features for the developers of products in need of dynamic data storage. This article will present an overview about the SST39VF512-70-4C-WHE-T and its uses. In addition, an in-depth analysis of its working principle will be provided.
Applications of the SST39VF512-70-4C-WHE-T Flash Memory
The SST39VF512-70-4C-WHE-T is a memory device that is predominantly used in consumer electronics products. It is designed to enable these products to handle data in a faster, easier and more reliable manner. Some of the common applications of this memory device include digital cameras, audio and video players, gaming consoles, digital TVs, set-top boxes and many more. It is also used in a variety of other consumer electronics, such as computing peripheral devices, printing devices and even vending machines.
The SST39VF512-70-4C-WHE-T memory device also offers an array of features that allow applications to read, write and erase data quickly and easily. It has several capacity options, allowing users to select the size that best suits their application needs. The device has a data integrity feature, which allows it to maintain data integrity even after multiple erasing cycles. It also offers data protection, which helps protect data from accidental erasure or damage.
Working Principle of the SST39VF512-70-4C-WHE-T
The SST39VF512-70-4C-WHE-T Flash memory device is based on the nibble-level, fast-erase technology. This technology enables it to write and erase data in small areas known as nibbles, while minimizing write and erase times. The device also allows data to be written and erased in multi-nibbles, allowing it to handle large amounts of data in a shorter period of time.
To ensure data integrity and reliability, the SST39VF512-70-4C-WHE-T uses a data integrity verification process. This process involves writing and erasing data and then verifying the data thereafter. If the data is not correct, the device can generate an error and inform the user, who then needs to rectify the data. This ensures that the data stored on the device is always accurate and reliable.
The SST39VF512-70-4C-WHE-T also offers advanced durability features, which enable it to handle many erasing and writing cycles over an extended period of time. The device is capable of sustaining up to 100,000 erasing/writing cycles, which is more than enough for most applications. Additionally, the device has self-conditioning features, which allow it to recover from any device failure.
In conclusion, the SST39VF512-70-4C-WHE-T Flash memory device is an ideal memory solution for a variety of consumer electronics devices. It provides developers of these products with a fast, reliable and highly durable memory solution that enables them to handle large amounts of dynamic data. Additionally, the device provides robust data integrity and protection features, ensuring that the data stored on the device is always accurate and reliable. Lastly, its advanced durability features make it suitable for extended use, allowing users to handle many erasing and writing cycles.
The specific data is subject to PDF, and the above content is for reference
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