Allicdata Part #: | SST39VF512-70-4I-NHE-ND |
Manufacturer Part#: |
SST39VF512-70-4I-NHE |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 512K PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 512Kb (64K x 8) Parallel 70ns 32-... |
DataSheet: | SST39VF512-70-4I-NHE Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | SST39VF512 |
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Memory chips are among today’s most popular components, especially those that meet specific requirements. The SST39VF512-70-4I-NHE is one such example, designed for use in a range of applications, from embedded systems to very dense memory arrays.
The SST39VF512-70-4I-NHE is a Programmable Read-Only Memory (PROM), or non-volatile memory chip. It is built using high-density 4Mbit (512K x 8) Flash technology and is fabricated using 0.18 micron CMOS double-poly, triple-metal process. This makes it suitable for a variety of high-speed and low-power applications.
The SST39VF512-70-4I-NHE is designed for use in exceptionally dense memory systems, where access to the memory cells is critical for performance. In these systems, the chip can read and write data much faster than other memory types. The chip is also designed for use in other embedded systems, such as those used in automotive and consumer electronics, where read and write operations must be performed quickly and accurately.
The SST39VF512-70-4I-NHE is also designed to be extremely reliable in mission-critical applications. It comes with built-in Error Checking And Correction (ECC) technology to detect and correct errors in data. It also has a built-in DC trimming system, which allows the chip to be optimized for different operating environments.
In terms of its working principle, the SST39VF512-70-4I-NHE uses a combination of multiplexers, memory cells, and conductors to store and retrieve data. When a read or write operation is requested, a signal is sent to the chip. This signal is then decoded by the multiplexer, which directs the signal to the memory cells. The conductors then carry the signal from the memory cell to the destination.
The SST39VF512-70-4I-NHE also features a 2-cycle read/write cycle time, allowing for fast access to data. The chip also features built-in self-test (BIST) capabilities, which allow for testing of the individual memory cells and the entire chip. This helps ensure that the chip is functioning properly at all times.
The SST39VF512-70-4I-NHE is a versatile and reliable memory chip, designed for use in embedded systems and dense memory arrays. Its multiplexers and conductors allow for fast and accurate read and write operations, while its built-in ECC and BIST technologies make it a reliable option for mission-critical applications. With its advanced features, the SST39VF512-70-4I-NHE is an excellent choice for a range of memory solutions.
The specific data is subject to PDF, and the above content is for reference
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