Allicdata Part #: | SST39VF800A-70-4I-B3KE-ND |
Manufacturer Part#: |
SST39VF800A-70-4I-B3KE |
Price: | $ 1.05 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 8M PARALLEL 48TFBGA |
More Detail: | FLASH Memory IC 8Mb (512K x 16) Parallel 70ns 48-... |
DataSheet: | SST39VF800A-70-4I-B3KE Datasheet/PDF |
Quantity: | 84 |
1 +: | $ 0.95760 |
25 +: | $ 0.88250 |
Series: | SST39 MPF™ |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 8Mb (512K x 16) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFBGA |
Supplier Device Package: | 48-TFBGA |
Base Part Number: | SST39VF800A |
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Memory
SST39VF800A-70-4I-B3KE is a type of non-volatile memory which is widely used in portable and embedded device applications. It is also known as Flash memory due to its capability of retaining data even when powered off. The device is available in a range of capacities ranging from 8 megabytes to 64 megabytes.
Application Field
SST39VF800A-70-4I-B3KE memory is widely used in embedded application fields like automotive, medical, industrial and consumer. In automotive applications, the device can be used for storing data related to performance tuning, emission control, crash test data and vehicle tracking information. In medical device applications, the device can be used in ECG machines, heart rate monitors, portable medical device and sophisticated medical imaging systems. For industrial applications, the device is suitable for use in computerized process control systems, supply chain management systems and automation systems. The device is also suitable for consumer applications like mobile phones, digital cameras, portable gaming consoles and portable media players.
Working Principle
SST39VF800A-70-4I-B3KE memory consists of a silicon die with an array of FLASH cells organized in blocks. Data is stored in EF-NAND (Erasable Flash – NAND) cells consisting of a floating gate transistor, connected in series in the array. Writing to these cells is done by placing the desired value in the array, followed by biasing the selected cells of the array with high voltages. Read operations are done by simply biasing the selected cells of the array with voltage to detect their values. Erase operations on the device are done by biasing the selected cells of the array with an extremely high voltage. All of these operations can be done using an external controller chip.
Another important feature of this device is that it can be programmed and erased by applying an appropriate voltage to specific pins on the device. This feature enables the device to be used as both data storage memory and program memory. Due to this feature, the device is widely used in embedded systems design, where the user doesn’t require external controller chips.
SST39VF800A-70-4I-B3KE memory is therefore suitable for a wide range of applications and can provide a highly reliable solution that is relatively low cost, low power and easy to use.
The specific data is subject to PDF, and the above content is for reference
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