STD2805T4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STD2805T4 is a high-power bipolar junction transistor (BJT) designed for use in applications that require robust outputs for high-accuracy power control. It is a part of ST’s STMicroelectronics’ Power Series of components, and it offers unprecedented levels of control and power density. The device is capable of handling up to 55 amps and 500 volts. It offers excellent thermal properties and low power dissipation, making it a valuable choice for applications where size, power and accuracy are critical.

At its most basic level, the operation of a bipolar junction transistor (BJT) is where two diodes are connected, in series, in the same direction. The two diodes are labeled emitter and collector. The standard configuration for a BJT is shown in the diagram below. Voltages and currents in a BJT can be controlled by changing the current through the base-emitter junction. This control current is called the base current. By controlling the base current, current flowing from the collector to the emitter can be modified.

The STD2805T4 is an N-channel Bipolar Junction Transistor (BJT). As with all N-channel BJTs, it is designed with a negative polarity. This means that the emitter-collector junction is reverse-biased when the base current is greater than zero. This reverse bias increases the voltage drop across the collector-emitter junction and reduces the transistor’s gain. As a result, the device has a high power output capability and can deliver high voltage and current to a load, making it ideal for applications requiring high current or power.

The STD2805T4 is also designed to operate in a wide range of temperatures and operating conditions. Its robust internal structure helps to protect the device against electrostatic discharge (ESD). In addition, it has an integrated junction gate protection feature, which helps to reduce gate threshold voltage drift due to positive or negative temperature changes. The device also offers low on-state resistance (RDSon) for very low power dissipation.

The device is designed to minimize power loss during operation. This is done by using switching FET technology and advanced layout techniques. To increase reliability and reduce power dissipation, the device is also designed with a silicon nitride body that helps to dissipate heat and reduce power losses. As a result, the device offers excellent thermal properties.

The STD2805T4 provides the necessary features and performance to enable precise control of high current, high power applications. Its high output capabilities and its integrated features make it an ideal choice for industrial applications and instrumentation. Its robust internal structure and its wide temperature range of operation make it a suitable choice for any application where high power and/or accuracy is required.

The specific data is subject to PDF, and the above content is for reference