| Allicdata Part #: | 497-6561-2-ND |
| Manufacturer Part#: |
STD20NF06T4 |
| Price: | $ 0.28 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 60V 24A DPAK |
| More Detail: | N-Channel 60V 24A (Tc) 60W (Tc) Surface Mount DPAK |
| DataSheet: | STD20NF06T4 Datasheet/PDF |
| Quantity: | 5000 |
| 1 +: | $ 0.28000 |
| 10 +: | $ 0.27160 |
| 100 +: | $ 0.26600 |
| 1000 +: | $ 0.26040 |
| 10000 +: | $ 0.25200 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 40 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
The STD20NF06T4 is a N-Channel field effect transistor (FET) manufactured by STMicroElectronics and offered in a TO-220 full-pack package. It is a switching transistor, meaning it can be used for applications requiring low on-resistance, low input and low output capacitance, and fast switching speeds.
Application Field
The STD20NF06T4 can be used in many application fields, such as power conversion for AC/DC & DC/DC, motor control, and high frequency converters and switch-mode circuits. It is suitable for applications in which the power dissipation is within the maximum rated power dissipation. It has high current capability and rugged mechanical construction so it can be used in several industrial and consumer applications.
Features & Benefits
- High current capability
- Low on-resistance
- Low input capacitance
- Low output capacitance
- Fast switching speed
- High switching frequency
- Adequate power dissipation
- Low profile
- Robust mechanical construction
- Competitive price
Working Principle
There are two main controlling elements used in an N-Channel MOSFET: the source and the gate. The source is the negative side of the FET and the gate is the positive side. Generally, the source is connected to the load, while the gate is connected to a voltage source. When a positive voltage is applied to the gate of the FET, it will allow current to flow from the source to the drain. The amount of current that can flow from the source to the drain is controlled by the voltage applied to the gate.
The STD20NF06T4 is a “depletion mode” FET, meaning the current flow (in the form of electrons) through the FET is enabled when there is no voltage applied to the gate electrode. If a voltage is applied, the current flow will decrease and eventually reach zero. The threshold voltage of the device determines the voltage at which the device will turn on or off.
Conclusion
The STD20NF06T4 is a reliable, efficient, and cost-effective N-Channel MOSFET that can be used in many applications. It features high current capability, low on-resistance, low input and output capacitance, and fast switching speeds. It requires a minimum gate voltage of 3.2V and can handle power dissipation up to 7W. The STD20NF06T4 is a great choice for applications in which performance and cost are a priority.
The specific data is subject to PDF, and the above content is for reference
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STD20NF06T4 Datasheet/PDF