
STD2N105K5 Discrete Semiconductor Products |
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Allicdata Part #: | 497-15308-2-ND |
Manufacturer Part#: |
STD2N105K5 |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1050V 1.5A DPAK |
More Detail: | N-Channel 1050V 1.5A (Tc) 60W (Tc) Surface Mount D... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.61619 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 115pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 1050V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD2N105K5 is a single-gate Field Effect Transistor (FET) designed for use as a low-cost switch or voltage-level shifter in a variety of digital circuit applications. It is typically used for digital logic switching and for isolation of digital signals from analog signals. In its most basic form, the transistor works as a current-controlled switch, allowing a small voltage applied to its gate to either pass or block current through the channel between the source and the drain. This is why the STD2N105K5 is commonly used in digital circuits.
Application Field
The STD2N105K5\'s small size and low power consumption make it an ideal choice for a wide range of digital circuit applications. It can be used in high-frequency circuits for a variety of signal switching and voltage-level shifting tasks. It is also used in consumer electronics such as televisions, DVD players and other audio-visual equipment; as well as computers, printers and other office electronics. Its low power consumption and small size also make it an attractive choice for portable devices such as cell phones, MP3 players and digital cameras.
Working Principle
When an electric potential is applied to the gate of the FET, the potential forms an electric field that attracts electrons in the semiconductor material. This increases the conductivity of the material, allowing current to flow between the source and the drain. The gate acts like a gate or switch, allowing or blocking currents as desired. The gate voltage can also be used to alter the current that can flow through the channel, allowing a wide range of applications.
The power that is applied to the gate of the FET is typically kept low in order to minimize any heating of the device. The resistivity between the source and the drain of the FET is also kept low when the gate voltage is applied, to reduce power consumption. The gate voltage is typically kept low as well, to minimize unnecessary dissipation of power.
In addition to its use in digital circuit applications, the STD2N105K5 is also used for various analog circuits and signal processing tasks. This is because the FET transistor is able to handle very high-frequency signals with low distortion, making it suitable for a wide range of applications. It is also used in applications that require high levels of safety and reliability, such as in aerospace and automotive systems.
Dimensions
The SDT2N105K5 is a small FET transistor and is typically available in a 3-pin package. Its maximum power dissipation is 2W and its maximum operating temperature is 150°C. Its approximate dimensions are 2.9mm x 6.7mm, which makes it suitable for a wide range of applications that require a small component size.
Conclusion
The STD2N105K5 is an ideal choice for a wide variety of digital and analog circuit applications. It is a small FET transistor with a maximum power dissipation of 2W and a maximum operating temperature of 150°C. It is ideal for a wide range of signal switching and voltage-level shifting tasks, as well as high-frequency circuits. It is also suitable for use in consumer electronics and portable devices, as well as aerospace and automotive systems, due to its low power consumption, small size and reliable performance.
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