Allicdata Part #: | 497-12555-5-ND |
Manufacturer Part#: |
STD2NK60Z-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 1.4A IPAK |
More Detail: | N-Channel 600V 1.4A (Tc) 45W (Tc) Through Hole I-P... |
DataSheet: | STD2NK60Z-1 Datasheet/PDF |
Quantity: | 3554 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 700mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STD2NK60Z-1 is a N-channel MOSFET (metal oxide semiconductor field-effect transistor) deployed in a variety of technology applications. This single-level MOSFET is used for a variety of functions, from providing power switches in digital circuits to controlling temperatures in heating systems. Moreover, it is designed to minimize on-state resistance and gate charge for improved conductivity and efficient power transfers.
The STD2NK60Z-1 is available in both unit-level packaging and multi-channel packaging. In unit-level packaging, the device has two terminals, the gate and the drain. The gate is used to control the device while the drain is used to supply/remove electric current to/from the gate. In multi-channel packaging, additional terminals are added for controlling multiple devices simultaneously.
The working principle of the STD2NK60Z-1 MOSFET is based on the physical phenomenon of electric field-effect conduction. A voltage applied to the gate terminal of the device creates an electric field which controls the flow of carriers (electrons or holes) in the semiconductor material of the MOSFET. The electric field is generated by the voltage applied to the gate terminal, and it can either enhance or deplete the number of carriers in the channel section, depending on the polarity of the applied voltage.
In this way, by controlling the number of carriers flowing in the device, the device current can be regulated. When the applied voltage is high enough and the number of carriers is sufficiently high in the semiconductor material, the device is said to be “on” and current flows through the device. When the voltage is below a certain threshold, the device enters a state where no current flows, known as “off”. Hence, the STD2NK60Z-1 MOSFET basically acts like an electrical switch albeit one that is controlled by a voltage applied to the gate terminal.
The STD2NK60Z-1 is mostly used in applications where speed and efficiency are of high demand. It is increasingly used for efficient power transfer, controlling temperatures in heating systems, providing power switches in digital applications, and regulating fuel injectors in engine controllers. It is also used for providing adjustable voltage, current, inductance and capacitance to audio amplifiers and active filters, as well as for controlling high-power switching operations.
Overall, the STD2NK60Z-1 MOSFET is a reliable and convenient solution for controlling and regulating current in various digital and analog applications. Thanks to its low on-state resistance and gate charge, it offers an efficient solution for transferring power efficiently, controlling temperatures, and providing adjustable voltage and current.
The specific data is subject to PDF, and the above content is for reference
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