STD20P3H6AG Allicdata Electronics
Allicdata Part #:

STD20P3H6AG-ND

Manufacturer Part#:

STD20P3H6AG

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET PCH 30V 20A DPAK
More Detail: P-Channel 30V 20A (Tc) 40W (Tc) Surface Mount DPAK
DataSheet: STD20P3H6AG datasheetSTD20P3H6AG Datasheet/PDF
Quantity: 1000
2500 +: $ 0.25358
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
Series: Automotive, AEC-Q101, STripFET™ F6
Rds On (Max) @ Id, Vgs: 50 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STD20P3H6AG Application Field and Working Principle

The STD20P3H6AG is a single N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It is ideal for use in many industrial applications, such as switching and power conversion. This device has an exceptionally low on-resistance and can be used to increase power efficiency, lower power consumption, and reduce system size.The STD20P3H6AG is a very capable MOSFET device suitable for a wide range of applications. It features on-resistance of 6.3 mΩ, a high drain-source voltage rating of 80 V, and a low thermal resistance. It has a low gate threshold voltage (2.2 V) for easy switching and can handle peak currents of up to 6A. Additionally, its maximum power dissipation of 8 W makes it ideal for high-power switching operations. The MOSFET is made up of three terminals – gate, drain, and source. The gate is the input signal to the MOSFET and controls the current flow from the drain to the source. The gate voltage determines the amount of drain current that can be allowed to flow – the higher the voltage, the higher the drain current. The drain-source voltage determines the amount of power that can be supplied to the load. The STD20P3H6AG is used in many industrial applications such as motor controllers, AC and DC power conversion, and power supplies. It is also used in applications such as power robotics, automated machinery, consumer electronics, and modern HVAC systems. The basic operation of the STD20P3H6AG is simple to understand. When a negative gate voltage is applied, the depletion region expands. This creates a barrier or insulation layer between the source and drain, preventing current flow. When a positive gate voltage is applied, the depletion layer decreases, allowing the current to flow from the source to the drain. The STD20P3H6AG is one of the most popular MOSFETs used in many different industries and applications. It has a low on-resistance and excellent switching characteristics, making it ideal for switching, power conversion, and power supply applications. Additionally, its low thermal resistance and high peak current capabilities make it suitable for high-power switching operations.

The specific data is subject to PDF, and the above content is for reference

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