
Allicdata Part #: | STD20NF10T4-ND |
Manufacturer Part#: |
STD20NF10T4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 100V 25A DPAK |
More Detail: | N-Channel 100V 25A (Tc) 85W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) is a type of transistor used in numerous electronics applications. Of the different types of FETs (Field Effect Transistors), the MOSFET is the most commonly used. With its low input capacitance, low output resistance, and ability to handle high currents, it is ideal for a wide range of applications including switched-mode power supplies and communications systems.The STD20NF10T4 is a common type of MOSFET. It is a enhancement-mode N-channel device, meaning that it has a negative voltage applied to its gate to form a channel. The STD20NF10T4 is a power MOSFET, meaning that it has been designed to have a better power handling ability than the standard MOSFET. The STD20NF10T4 is rated at 10 Amps and has a maximum drain-source breakdown voltage of 20 Volts.The main principle of operation of the MOSFET is based on the MOS capacitance. The technical name of this phenomenon is "gate-source capacitance". When a voltage is applied to the gate of the MOSFET, it causes a charge to be stored on the gate-source capacitor. This charge is what enables the MOSFET to pass the current through it.The gate voltage of the STD20NF10T4 is rated at 5 Volts (Vgs) with a maximum breakdown voltage of 20 Volts, making it an ideal choice for high voltage applications. The 1.2 Ohm (Rds) on-resistance of the MOSFET is also quite low, making it an ideal choice for low power applications. As for the switching speed, the STD20NF10T4 is rated at around 55nsec, making it suitable for a range of applications from high speed signals, to switching speed control.Due to its excellent power handling abilities and low on-resistance, the STD20NF10T4 is used in a wide range of applications. Its low input capacitance makes it ideal for use in switched-mode power supplies and high speed signal processing, while its low output resistance makes it an ideal choice for communications systems, digital switching circuitry and other high current applications.In summary, the STD20NF10T4 is an ideal choice for applications that require a combination of high current and high voltage. With its low input capacitance and output resistance, the MOSFET is well suited for a variety of applications, including switched-mode power supplies, communications systems, and digital switching circuitry. The STD20NF10T4\'s rated current and breakdown voltage makes it an excellent choice for high voltage applications.
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