STD2HNK60Z Allicdata Electronics
Allicdata Part #:

497-6192-2-ND

Manufacturer Part#:

STD2HNK60Z

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 2A DPAK
More Detail: N-Channel 600V 2A (Tc) 45W (Tc) Surface Mount DPAK
DataSheet: STD2HNK60Z datasheetSTD2HNK60Z Datasheet/PDF
Quantity: 1000
2500 +: $ 0.30226
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A STD2HNK60Z is a Silicon N-channel MOSFET transistor that operates in a single-voltage environment. This type of transistor is an important component used in many electrical and electronic applications and is best suited for power switching and DC-DC converter applications. As with any transistor, the STD2HNK60Z has its own unique characteristics, which affect the functioning of the device. In this article, we will discuss the application field and working principle of the STD2HNK60Z.

The STD2HNK60Z is a N-channel MOSFET or metal oxide semiconductor (MOS) field-effect transistor. It is designed to operate in applications that require lowOn-state resistance and high-pulsed drain current. The dielectric oxide layer acts as a gate to enable switching on and off at certain voltages and current levels, which is why it is also referred to as a voltage-controlled switch. Its lowOn-state resistance and large area of activation enable it to operate at higher frequencies than other types of transistors. It is suitable for use in applications such as power switching and DC-DC conversion.

The working principle of the STD2HNK60Z is straightforward. When the gate voltage is positive, the drain current is turned on and the output voltage across the drain-source drops. When the gate voltage is negative, the drain current is turned off and the output voltage rises again. By controlling the gate voltage, the current can be controlled. This type of transistor is used in applications such as inverters and voltage regulators, where variable output voltage is necessary.

The STF2HNK60Z has a number of advantages over other types of transistors. One of the main benefits is its lowOn-state resistance, which allows it to operate at high frequencies. It also has a low gate threshold voltage and a low input capacitance, which makes it ideal for high-speed switching. Furthermore, it is easy to drive and can be used in a wide range of voltage applications. The most commonly used package is the TO220 package, which allows for easy installation and has excellent thermal characteristics.

The STD2HNK60Z can be used in a number of different power-switching and DC-DC converter applications. It is often used for switching between high and low voltages, as well as for controlling the output voltage of voltage regulators. Since it has a lowOn-state resistance and can operate at high frequencies, it is suitable for use in high-speed switching applications. Additionally, it can be used for current-limiting and surge protection, as well as for current-offset functions.

In conclusion, the STD2HNK60Z is a silicon N-channel MOSFET transistor that is used for power switching and DC-DC conversion applications. It has a lowOn-state resistance and a wide range of operating frequencies. It is easy to install and can be used in a variety of voltage applications. Furthermore, it can be used for current-limiting and surge protection, as well as for current-offset functions. This makes it an excellent choice for a variety of electrical and electronic applications.

The specific data is subject to PDF, and the above content is for reference

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