
Allicdata Part #: | 497-5810-2-ND |
Manufacturer Part#: |
STD20NF20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 200V 18A DPAK |
More Detail: | N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DP... |
DataSheet: | ![]() |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD20NF20 is a logic level enhancement mode power field-effect transistor (FET) manufactured by STMicroelectronics. It is a low voltage, high current device for low on-resistance and low gate-to-source voltage requirements.
It is used in a wide variety of applications such as power supplies, audio amplifiers, and load switches. The STD20NF20 also provides excellent thermal performance and high power dissipation capability.
The STD20NF20 is classified as a single type device, specifically an N-channel MOSFET. N-channel MOSFETs have distinct advantages over their P-channel counterparts due to their higher switching speeds and higher current densities.
The STD20NF20 is constructed with a level 2 trench gate structure. This structure allows for fast switching times and low gate-to-source capacitances. The device operates between -55°C to 175°C and is rated to handle 20 Amp loads.
The STD20NF20 is ideally suited for use in high-speed switching applications where low on-state resistance, low gate-to-source capacitance, and fast switching times are required. It can also be used in DC-DC converters, audio amplifiers, and load switching circuits.
The working principle of a MOSFET is based on the use of a gate electrode. The gate electrode is placed between the source and drain of the device. When a negative voltage is applied to the gate electrode, the depletion region between the source and drain extends and the transistor is activated. Conversely, when a positive voltage is applied to the gate electrode, the depletion region shrinks and the transistor is deactivated.
The STD20NF20 is a sophisticated device that offers superior thermal and electrical performance characteristics. It has a low gate capacitance and low on-resistance, making it an ideal choice for high-speed switching applications. In addition, its level-2 trench structure ensures improved thermal performance and high power dissipation capability.
Overall, the STD20NF20 transistor is an excellent FET for applications that demand a high level of thermal performance, low on-resistance, and fast switching times. It is an ideal choice for use in audio amplifiers, DC-DC converters, and load switches.
The specific data is subject to PDF, and the above content is for reference
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