STD20NF20 Allicdata Electronics
Allicdata Part #:

497-5810-2-ND

Manufacturer Part#:

STD20NF20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 200V 18A DPAK
More Detail: N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DP...
DataSheet: STD20NF20 datasheetSTD20NF20 Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD20NF20 is a logic level enhancement mode power field-effect transistor (FET) manufactured by STMicroelectronics. It is a low voltage, high current device for low on-resistance and low gate-to-source voltage requirements.

It is used in a wide variety of applications such as power supplies, audio amplifiers, and load switches. The STD20NF20 also provides excellent thermal performance and high power dissipation capability.

The STD20NF20 is classified as a single type device, specifically an N-channel MOSFET. N-channel MOSFETs have distinct advantages over their P-channel counterparts due to their higher switching speeds and higher current densities.

The STD20NF20 is constructed with a level 2 trench gate structure. This structure allows for fast switching times and low gate-to-source capacitances. The device operates between -55°C to 175°C and is rated to handle 20 Amp loads.

The STD20NF20 is ideally suited for use in high-speed switching applications where low on-state resistance, low gate-to-source capacitance, and fast switching times are required. It can also be used in DC-DC converters, audio amplifiers, and load switching circuits.

The working principle of a MOSFET is based on the use of a gate electrode. The gate electrode is placed between the source and drain of the device. When a negative voltage is applied to the gate electrode, the depletion region between the source and drain extends and the transistor is activated. Conversely, when a positive voltage is applied to the gate electrode, the depletion region shrinks and the transistor is deactivated.

The STD20NF20 is a sophisticated device that offers superior thermal and electrical performance characteristics. It has a low gate capacitance and low on-resistance, making it an ideal choice for high-speed switching applications. In addition, its level-2 trench structure ensures improved thermal performance and high power dissipation capability.

Overall, the STD20NF20 transistor is an excellent FET for applications that demand a high level of thermal performance, low on-resistance, and fast switching times. It is an ideal choice for use in audio amplifiers, DC-DC converters, and load switches.

The specific data is subject to PDF, and the above content is for reference

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