STD2LN60K3 Allicdata Electronics
Allicdata Part #:

497-13390-2-ND

Manufacturer Part#:

STD2LN60K3

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 600V 2A DPAK
More Detail: N-Channel 600V 2A (Tc) 45W (Tc) Surface Mount DPAK
DataSheet: STD2LN60K3 datasheetSTD2LN60K3 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.22586
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD2LN60K3 is a single n-channel power MOSFET that is frequently used in a variety of applications. The device is designed with a high-speed switching capability and low on-resistance. The STD2LN60K3 has a current rating of 60A, which makes it an ideal choice for power switching applications. It is also widely used in switching applications such as DC-DC converters, LED lighting, and motor drivers.

The STD2LN60K3 is a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a voltage-controlled transistor that operates on a principle of electrostatic charge transfer. MOSFETs are superior to bipolar or junction transistors in terms of switching speed, control, and power efficiency. This makes them a suitable choice for high-power applications in power converters, motor drivers, and power supplies.

The STD2LN60K3 is a single n-channel MOSFET. It has an on-resistance of 250mΩ and a maximum voltage rating of 30V. The drain-source breakdown voltage is rated at 20V. The device also has a gate-source voltage rating range of -20V to +20V and a gate-source threshold voltage of 1V. It has a high-speed switching capability, with a rise and fall time of 4ns and 12ns respectively.

The second feature of the STD2LN60K3 is its on-resistance. The on-resistance is a measure of the power consumption and dissipation of a part. On its lowest setting, the on-resistance of the STD2LN60K3 is 250mΩ. This translates to a low power consumption and dissipation, making this device suitable for high-power applications. On its highest setting, the on-resistance is 4.7Ω.

The STD2LN60K3 is a versatile device, with a variety of applications. It has a wide channel so it is suitable for use in a variety of high-power applications. It is often used in switching applications, such as DC-DC converters, LED lighting, and motor drivers. It is also used in high-frequency switching applications because of its high switching speed. The low on-resistance of the device also makes it suitable for power switching applications.

In conclusion, the STD2LN60K3 is a single n-channel MOSFET. It has a current rating of 60A and an on-resistance of 250mΩ. It has a high-speed switching capability and low on-resistance, making it a suitable choice for high-power applications in power converters, motor drivers, and power supplies. It is also used in switching applications such as DC-DC converters, LED lighting, and motor drivers.

The specific data is subject to PDF, and the above content is for reference

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