| Allicdata Part #: | 497-16593-5-ND |
| Manufacturer Part#: |
STFH10N60M2 |
| Price: | $ 1.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET NCH 600V 7.5A TO220 |
| More Detail: | N-Channel 600V 7.5A (Tc) 25W (Tc) Through Hole TO-... |
| DataSheet: |  STFH10N60M2 Datasheet/PDF |
| Quantity: | 389 |
| 1 +: | $ 1.16550 |
| 10 +: | $ 1.05462 |
| 100 +: | $ 0.84767 |
| 920 +: | $ 0.59525 |
| 1840 +: | $ 0.54627 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| Series: | MDmesh™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STFH10N60M2 is one of the most reliable and powerful MOSFETs (metal oxide semiconductor field-effect transistor) on the market today. It is an N-channel enhancement-mode device that is typically used in switching applications. It is designed to provide a low-on-resistance performance while offering high current carrying capability.
The STFH10N60M2 offers excellent switching performance, high efficiency, and good thermal characteristics. It is also resistant to electrostatic discharge. The device also has a wide operating temperature range of between -55°C and 175°C.
The operation of the STFH10N60M2 is based on the principle of MOSFETs. MOSFETs are voltage-controlled devices that use the gate-to-source voltage to control the current flow between the drain and source. This means that the current is able to be distributed in proportion to the voltage difference between the gate and source terminals.
When the STFH10N60M2 is connected to a circuit, an electric field is created by applying a voltage to the gate terminal. This electric field creates a barrier between the drain and source terminals, which prevents current from flowing through the device. When the gate voltage exceeds a certain threshold, the electric field is weakened, allowing current to flow through the device.
The STFH10N60M2 is mainly used in switch mode power supply circuits, high-frequency switching circuits, DC-DC converters, and motor drives. It is also used in battery-powered applications such as drones, robots, and robots. Additionally, it can be used in high-voltage current injection applications.
The STFH10N60M2 is a very reliable device with a wide operating temperature range and high-current holding capability. It is also well-suited for applications where power efficiency is of primary concern. Additionally, the device is very resistant to electrostatic discharge, making it an excellent choice for circuits in harsh environments.
The STFH10N60M2 is a powerful and reliable MOSFET device that offers excellent switching performance, high efficiency, and good thermal characteristics. It is mainly used in switch mode power supply circuits, high-frequency switching circuits, motor drives, and battery-powered applications. It is well-suited for applications where power efficiency is of primary concern, and is also resistant to electrostatic discharge.
The specific data is subject to PDF, and the above content is for reference
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