Allicdata Part #: | 497-16596-5-ND |
Manufacturer Part#: |
STFH24N60M2 |
Price: | $ 2.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 18A TO220FP |
More Detail: | N-Channel 600V 18A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | STFH24N60M2 Datasheet/PDF |
Quantity: | 225 |
1 +: | $ 2.11050 |
10 +: | $ 1.90701 |
100 +: | $ 1.53235 |
920 +: | $ 1.07603 |
1840 +: | $ 0.98750 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STFH24N60M2 is an advanced and unique enhancive metal-oxide semiconductor field-effect transistor (MOSFET) that is used for select applications. It is widely used in power conversion and automotive circuits. It allows for high-temperature operation. This article will discuss the application field and working principle of the STFH24N60M2.
The STFH24N60M2 is a high-current, high performance N-channel MOSFET transistor. It is specifically designed for applications where low gate threshold voltages and fast switching is required. This device offers low on-state resistance, low gate charge, and a resulting high saturation current. It is well-suited for power switch applications, such as in motor control systems, battery charging circuits and power converters.
Unlike traditional P-channel MOSFETs, the STFH24N60M2 has a gate threshold voltage of only 1.5V. This feature allows the device to switch a large amount of current, while minimizing any thermal losses that may occur. The STFH24N60M2 also has a low-thermal resistance design which allows for efficient operation in high-temperature applications. Additionally, the device can operate at temperatures from -55°C to +175°C.
The working principle of the STFH24N60M2 is relatively simple. When an external voltage is applied to the gate of the MOSFET, a controlled current flows from the source to the drain. This current is proportional to the amount of voltage applied. The amount of current is then determined by the MOSFET threshold voltage which is usually 2V. By adjusting the voltage at the gate, the amount of current flowing from the source to the drain can be effectively limited.
The STFH24N60M2 also has a body diode which makes it ideal for controlling inductive loads. This diode acts as a reverse polarity protection and prevents the backflow of current when the MOSFET is off. Furthermore, it eliminates the need for an external freewheeling diode, and thus reduces the associated system complexity and cost.
Overall, the STFH24N60M2 is an excellent choice for power conversion and automotive applications where low gate threshold voltages and high saturation currents are required. It offers low on-state resistance, low gate charge, and a resulting high saturation current. Additionally, its low thermal resistance design makes it suitable for operation in high-temperature applications, while its body diode eliminates the need for an external freewheeling diode. By understanding the application field and working principle of the STFH24N60M2, designers and engineers can easily take advantage of its advanced features and capabilities.
The specific data is subject to PDF, and the above content is for reference
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