Allicdata Part #: | 497-16595-5-ND |
Manufacturer Part#: |
STFH18N60M2 |
Price: | $ 1.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 13A TO220FP |
More Detail: | N-Channel 600V 13A (Tc) 25W (Tc) Through Hole TO-2... |
DataSheet: | STFH18N60M2 Datasheet/PDF |
Quantity: | 490 |
1 +: | $ 1.73250 |
10 +: | $ 1.56177 |
100 +: | $ 1.25521 |
920 +: | $ 0.88143 |
1840 +: | $ 0.80890 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 791pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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.STFH18N60M2 is a member of a family of high-voltage, high-current N-channel MOSFETs from STMicroelectronics. With its advanced technology, it provides excellent switching performance. Its main features include a low RDS(on) of 60mohm at 10V, a very low gate charge of 11nC, and a high current capability of 14A out at 25°C. Due to its many advantages, it is widely used for applications such as power conversion, motor control, interface power supply, light control, motor control and automotive. This article will discuss the application field and working principle of STFH18N60M2.
Application Field
STFH18N60M2 can be used in a wide range of applications, mainly in power conversion and motor control.Power conversion is the process of converting electric power from one form to another, usually through some form of energy storage device, such as a battery. Power conversion is important for many applications, including electric vehicles and smart grid systems. Motor control applications include controlling the speed and direction of a motor, as well as driver safety systems. STFH18N60M2 is well-suited for these applications thanks to its low RDS(on) and low gate charge.
Working Principle
A MOSFET is an insulated-gate field-effect transistor (IGFET) that functions as a controllable switch. It is usually used in both switching or amplifying applications and its performance is affected by the gate-source voltage (Vgs). In the case of STFH18N60M2, the device is an N-channel MOSFET, meaning that an N-type semiconductor channel is formed in the channel region of the device, which is surrounded by the source, drain, and gate electrodes. When a positive voltage is applied to the gate, it attracts electrons from the source and depletes electrons from the channel, thus allowing current to flow from the source to the drain. When the gate voltage is reversed, the electrons depopulate the channel and block current. STFH18N60M2 is specifically designed to provide low RDS(on), high current capabilities and low gate charge, making it an ideal choice for applications requiring reliable performance.
In conclusion, STFH18N60M2 is a high-voltage, high-current N-channel MOSFET from STMicroelectronics. It is used primarily in power conversion and motor control applications, due to its low RDS(on) and low gate charge. It works by forming an N-type semiconductor channel in the channel region, which can be depleted or populated by applying a gate voltage. This allows the device to act as a controllable switch, providing reliable performance and high current capabilities.
The specific data is subject to PDF, and the above content is for reference
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