STFH13N60M2 Allicdata Electronics
Allicdata Part #:

497-16594-5-ND

Manufacturer Part#:

STFH13N60M2

Price: $ 1.61
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 11A TO220FP
More Detail: N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-2...
DataSheet: STFH13N60M2 datasheetSTFH13N60M2 Datasheet/PDF
Quantity: 465
1 +: $ 1.46160
10 +: $ 1.31859
100 +: $ 1.05960
920 +: $ 0.74406
1840 +: $ 0.68284
Stock 465Can Ship Immediately
$ 1.61
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STFH13N60M2 is a high performance, high density, and cost-effective planar MOSFET. It belongs to a family of transistors called field-effect transistors (FETs) for its gate threshold voltage control. This device, in particular, is a single specific MOSFET variety dedicated to controlling electrical power in applications from a few watts to many watts.

The STFH13N60M2 has a variety of features that make it ideal for a wide range of applications. It has a maximum drain-source voltage of 600 Volts, with a power dissipated at 25°C in a single non-repetitive load-on time of 80 Watt. Additionally, the device has a Drain-Source on resistance of 260 milliohm and gate charge of 120 nC. The gate threshold voltage, which is the differentiating reason it can be put in the FET category, is 4 volts.

The practical application of the STFH13N60M2 is found in a variety of different industrial and commercial products. It\'s prevalent in the telecommunications industry for applications concerning switching and controlling, in computers for logic and power switches, and in automotive and transportation for voltage and current regulating. These, and many more, are the places where one will most commonly find the STFH13N60M2.

In order to understand how and why the STFH13N60M2 is useful, it\'s important to understand its working principles. Essentially, the STFH13N60M2 operates as a three-terminal voltage-controlled switch. It provides a path between two of its terminals and can be turned on or off by applying an appropriate voltage to its gate. Generally, when the voltage applied to the gate surpasses the threshold voltage, the device is switched on. On the other hand, when the voltage falls below the threshold, the device is switched off. This is done by using the properties of an electric field between the gate and the channel.

Additionally, two main biasing modes exist for the STFH13N60M2. In the linear mode the device functions as an amplifier. It works by allowing an electronic signal to control the output current and the input voltage, allowing for voltage and current amplification. On the other hand, when the device is put in the saturation model, it functions as a switch. In this mode, the device is ideal for applications where fast switching is required.

When properly utilized, the STFH13N60M2 can greatly improve the efficiency and performance of the application it is being used in. Its features, such as maximum drain-source voltage, on resistance, gate charge, and gate threshold voltage make it suitable for a wide array of applications while its biasing modes make it capable of amplifying signals and switching, thus allowing power to be regulated in different scenarios. The STFH13N60M2 is found in many industrial and commercial products, from telecommunications to computers and transportation.

The specific data is subject to PDF, and the above content is for reference

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