
Allicdata Part #: | STGB18N40LZ-1-ND |
Manufacturer Part#: |
STGB18N40LZ-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 420V 30A 150W I2PAK |
More Detail: | IGBT 420V 30A 150W Through Hole I2PAK |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 150W |
Base Part Number: | STG*18N |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 300V, 10A, 5V |
Td (on/off) @ 25°C: | 650ns/13.5µs |
Gate Charge: | 29nC |
Input Type: | Logic |
Switching Energy: | -- |
Series: | PowerMESH™ |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 4.5V, 10A |
Current - Collector Pulsed (Icm): | 40A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 420V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The STGB18N40LZ-1 is a single IGBT that belongs to STMicroelectronics\' IGBT offering. It is a high-efficiency, low-on-state resistance, and low-leakage IGBT, which can handle large power levels with a wide temperature range. The applications of this particular IGBT include high-current switching, motor control, inverter applications, and uninterruptible power supplies.
In order to understand its working principle, we must first understand what an IGBT is. In essence, an IGBT is an Insulated Gate Bipolar Transistor, which is a type of transistor that combines the advantages of both bipolar transistors and MOSFETs. Its operation is based on the fact that an insulated gate controls the amount of current and voltage applied to it, thus allowing it to switch on and off at various frequencies.
STGB18N40LZ-1 has a low on-state resistance and low leakage current. This indicates that it can handle large power levels and that it won’t be affected by temperature changes. It also has a high efficiency and very low switching losses. Additionally, it has an optimal package size and very low EMI/RFI emission. This makes it an ideal choice for a variety of power conversion applications.
The working principle of the STGB18N40LZ-1 is based on that of a normal IGBT. The gate of the IGBT is controlled by a tiny integrated circuit, which is typically referred to as the gate driver. This gate driver is used to supply the gate with a defined amount of voltage, which determines the amount of current that passes through the IGBT. When the gate voltage is applied, it allows the current to flow through the IGBT. The amount of current that flows through the IGBT is then regulated by the integrated circuit and the voltage applied to the gate.
The STGB18N40LZ-1 also has a special feature known as the `body diode`. This diode helps to prevent large voltage spikes when the IGBT is switched off. This protects other components in the circuit from damage. In addition, the IGBT also has an important feature known as the `freewheeling diode`. This diode helps to provide continuity of current at the output during a switch-on or a switch-off event. These features make it an ideal choice for motor control applications.
The STGB18N40LZ-1 single IGBT is a high-efficiency, low-on-state resistance and low-leakage IGBT developed by STMicroelectronics. This particular IGBT has a wide temperature range and a low switching losses, making it an ideal choice for applications such as high-current switching, motor control, inverter applications, and uninterruptible power supplies. The working principle of the STGB18N40LZ-1 is based on the same as other IGBTs, as an insulated gate voltage is used to control the amount of current that flows through it.
The specific data is subject to PDF, and the above content is for reference
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