STGB20NB41LZT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-4351-2-ND |
Manufacturer Part#: |
STGB20NB41LZT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 442V 40A 200W D2PAK |
More Detail: | IGBT 442V 40A 200W Surface Mount D2PAK |
DataSheet: | STGB20NB41LZT4 Datasheet/PDF |
Quantity: | 2000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | PowerMESH™ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 442V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 80A |
Vce(on) (Max) @ Vge, Ic: | 2V @ 4.5V, 20A |
Power - Max: | 200W |
Switching Energy: | 5mJ (on), 12.9mJ (off) |
Input Type: | Standard |
Gate Charge: | 46nC |
Td (on/off) @ 25°C: | 1µs/12.1µs |
Test Condition: | 320V, 20A, 1 kOhm, 5V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Base Part Number: | STG*20NB |
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STGB20NB41LZT4 is a Single IGBT (Insulated Gate Bipolar Transistor), which has a wide application in power control. This transistor makes it easier and more economical for designers and engineers to provide an effective and efficient solution for power control in high-performance applications, such as motor and power conditioning.
Application Field
The STGB20NB41LZT4 is an advanced intelligent power device that is frequently used in several applications, from communication infrastructure and industrial power conversion to motor control solutions. Some of the main applications of this device are the following:
- Power Supplies
- Motor Drives
- Robotics Applications
- Electric Vehicles
- Smart Grid Applications
- Data Centers
In addition to these applications, this transistor is also widely used in the field of thermal management of communications infrastructure. It is an ideal choice for the effective control of the thermal operating temperature in networking communication equipment.
Working Principle
The STGB20NB41LZT4 is a single IGBT device, which combines the advantages of a power metal-oxide-semiconductor field-effect transistor (MOSFET) with a bipolar junction transistor (BJT) in a single device. It offers high-speed switching with low voltage drop and high peak current capabilities, making it suitable for various applications. The working principle of this transistor is based on its structure and design, in which two JFETs are connected gate-to-gate and a single BJT is connected gate-to-emitter. Due to this arrangement, the single IGBT can be used as an on/off switch or a variable voltage or current amplifier.
This transistor is also designed with two outputs, a high voltage output (HVOUT) and a low voltage output (LVOUT). The HVOUT can carry up to 6A of current and operates with a voltage up to 600V, while the LVOUT can carry up to 40A of current and can operate with a voltage up to 600V. This allows higher switching currents and higher voltages, thus making the STGB20NB41LZT4 more suitable for various applications.
Conclusion
The STGB20NB41LZT4 single IGBT is a versatile and powerful device that is widely used in various applications. It combines the advantages of MOSFET and BJT in a single device, thus allowing higher switching current and higher voltages. It is an ideal choice for power control, motor drives, robotics applications, electric vehicles, and thermal management of communications infrastructure. It is an efficient and effective solution for various applications.
The specific data is subject to PDF, and the above content is for reference
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