STGB40H65FB Allicdata Electronics
Allicdata Part #:

497-16977-2-ND

Manufacturer Part#:

STGB40H65FB

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT BIPO 650V 40A D2PAK
More Detail: IGBT Trench Field Stop 650V 80A 283W Surface Mount...
DataSheet: STGB40H65FB datasheetSTGB40H65FB Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 1.11132
2000 +: $ 1.05840
Stock 1000Can Ship Immediately
$ 1.23
Specifications
Power - Max: 283W
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C: 40ns/142ns
Gate Charge: 210nC
Input Type: Standard
Switching Energy: 498µJ (on), 363µJ (off)
Series: HB
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Current - Collector Pulsed (Icm): 160A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors are one of the most useful and versatile devices in electrical engineering. They can be used in a variety of applications, from acting as switches for a wide range of devices, to amplifying and stabilizing signals. The STGB40H65FB is a single IGBT, or insulated gate bipolar transistor, which is the most commonly used type of transistor in modern electronics. The STGB40H65FB is designed to utilize insulated gate field effect technology, integrating characteristics of both MOSFET and BJT transistors into a single package. This article will explain the applications and working principles of the STGB40H65FB.

Application Fields:

The STGB40H65FB is designed to be used in a variety of power circuits, providing a combination of high power switching and transmission capabilities. It is used in applications such as motor drives and power converters, where its low on-resistance and low gate charge make it a good choice for applications that require a high-powered switch. The STGB40H65FB is also well suited for high-frequency switching applications due to its low switching times. Other applications that make use of this transistor include uninterruptable power supplies (UPS), switching regulators, and low-voltage power factor correction circuits.

Working Principle:

The STGB40H65FB is a three-terminal device, with the emotion between the collector and emitter controlled by the insulated gate bipolar transistor (IGBT) technology. This means that current will only flow through the device when a voltage is applied to the gate terminal. When voltage is applied to the gate, it changes the orientation of the carriers (electrons or holes) in the region between the source and drain, resulting in a current passing through the device. By changing the voltage applied to the gate, the current passing through the device can be varied, allowing it to be used as an effective switch.

The STGB40H65FB has a healthy breakdown voltage, meaning it can safely withstand larger voltages than other transistors. It also has a low on-resistance, allowing the current passing through it to be fairly low when the transistor is in an “ON” state. Additionally, the STGB40H65FB has low gate charge, meaning it doesn’t consume much power when it is not in use and making it suitable for high-frequency switching applications.

Conclusion:

The STGB40H65FB is an insulated gate bipolar transistor that is used in a variety of power-related applications, such as motor drives and power converters. It uses IGBT technology to switch the current passing through it, and it has a low on-resistance and gate charge, making it suitable for high-frequency switching applications and power-factor-correction circuits. As such, this transistor is a great choice for applications that require a rugged and reliable power switch.

The specific data is subject to PDF, and the above content is for reference

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