STGB19NC60KT4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STGB19NC60KT4 is a single IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications. It is an ideal choice for applications in automotive, industrial, high-step power supplies, and home appliances.

An IGBT is a power semiconductor device consisting of two components, an insulated gate field effect transistor (IGFET) and a bipolar junction transistor (BJT). It combines the advantages of the two components, providing high operation speed, high current ratings, and low on-state resistance (RDS(on)), making it nearly ideal for high-power switching applications. It exhibits low power loss even at high temperatures, making it especially suitable for use in high-temperature environments such as engines and power supplies.

The STGB19NC60KT4 has a 600V operating voltage rating and a 19A current rating. It also has a very low gate threshold voltage (Vgs(th)) of 2.8V and a fast response time of 85ns. The RDS(on) is a very low 0.065Ω, making it suitable for efficient switching in a wide range of applications.

The STGB19NC60KT4 is a three-terminal field effect transistor consisting of an N-channel MOSFET and an NPN-type BJT. It operates using the conventional gate drive technique of “when the gate is high, the device is off; and when the gate is low, the device is on”. When the gate potential exceeds the threshold voltage, the silicon body between the emitter and the collector junction becomes biased. This allows a controlled amount of current to flow through the device, acting as a normally open switch.

In addition to the conventional techniques, the STGB19NC60KT4 can be operated using “instantaneous turn-on" techniques or “overlap current limitation" techniques. The "instantaneous turn-on" technique is used to control the turn-on and turn-off times of the device by changing the way the gate voltage is applied. The overlap current limitation technique is used to limit the amount of current during the overlap period between the on-state and the off-state of the transistor when switching high currents.

The STGB19NC60KT4 is a highly capable device, and suitable for a wide range of power switching applications. Its low RDS(on) and fast response time make it ideal for Industrial and Automotive applications, such as motor control and inverters. Its wide operating temperature range and low gate threshold voltage also make it an excellent choice for high-step power supplies and home appliances.

The specific data is subject to PDF, and the above content is for reference