STGB20NB37LZT4

Series:	PowerMESH™
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	425V
Current - Collector (Ic) (Max):	40A
Current - Collector Pulsed (Icm):	80A
Vce(on) (Max) @ Vge, Ic:	2V @ 4.5V, 20A
Power - Max:	200W
Switching Energy:	11.8mJ (off)
Input Type:	Standard
Gate Charge:	51nC
Td (on/off) @ 25°C:	2.3µs/2µs
Test Condition:	250V, 20A, 1 kOhm, 4.5V
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Base Part Number:	STG*20NB

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Introduction to STGB20NB37LZT4 IGBT

STGB20NB37LZT4 is a N-channel insulated gate bipolar transistor (IGBT) designed for high-power switching applications and provides robust and reliable switching performance. STGB20NB37LZT4 is particularly suited for medium and high voltage switching applications, due to its low switching energy and reverse current capability.

Application fields of STGB20NB37LZT4 IGBT

STGB20NB37LZT4 IGBT is suitable in applications such as electric motor drives, UPS, power supplies, solar panel inverters, induction cookers, HVAC systems, motor controllers, and programmable logic controllers. It offers excellent power rating, gate drive capability, gate speed, and gate turn-off times. STGB20NB37LZT4 can also be used in applications such as power converters, rectifiers, and UPS systems.

Working Principles of STGB20NB37LZT4 IGBT

STGB20NB37LZT4 IGBTs are based on the principle of bipolar junction transistors (BJTs) and are composed of N-channel elements integrated with a gate oxide layer. The IGBT switches ON once a voltage is applied to the gate, allowing current flow from the collector to the emitter.When an appropriate voltage is applied to the gate, the gate oxide layer charges and allows current flow from the collector to the emitter. This process is called avalanche breakdown. When the voltage applied to the gate is removed, the gate oxide layer discharges and the current flow from the collector to the emitter is cut off, which prevents energy losses and improves the device efficiency.The STGB20NB37LZT4 IGBT also incorporates a built-in diode to eliminate the need for external protection diodes, which improves the protection against current spikes and allows more flexible system design.

Advantages of STGB20NB37LZT4 IGBTs

STGB20NB37LZT4 IGBTs offer several advantages compared to conventional BJTs. These advantages include lower on-state power losses due to their low switching energy, improved electrical resistance, and a longer life-span than traditional BJTs. The STGB20NB37LZT4 IGBT also offers high input impedance, fast switching speeds, superior thermal stability, and excellent gate drive capability.In addition, the built-in protection diodes in the STGB20NB37LZT4 IGBT reduce the number of components required for system design, improve the efficiency of the system, and reduce the cost of the design. The IGBT is also suitable for applications that require medium and high voltage switching.

Conclusion

The STGB20NB37LZT4 IGBT is an ideal choice for medium and high voltage switching applications due to its low switching energy, reverse current capability, fast switching speed, and high performance gate drive capabilities. It offers superior performance over traditional BJTs, with low on-state losses and improved electrical resistance, and it is suitable for applications that require medium and high voltage switching. The STGB20NB37LZT4 IGBT is a reliable, efficient, and cost-effective choice for high-power applications.

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