Allicdata Part #: | STGB30H65FB-ND |
Manufacturer Part#: |
STGB30H65FB |
Price: | $ 1.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT |
More Detail: | IGBT Trench Field Stop 650V 60A 260W Surface Mount... |
DataSheet: | STGB30H65FB Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.91122 |
Switching Energy: | 151µJ (on), 293µJ (off) |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 37ns/146ns |
Gate Charge: | 149nC |
Input Type: | Standard |
Series: | HB |
Power - Max: | 260W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Part Status: | Active |
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The STGB30H65FB is a Single Insulated Gate Bipolar Transistor (IGBT), distributed by STMicroelectronics. Despite the fact that it is not the most powerful Insulated Gate Bipolar Transistor (IGBT), it is certainly one of the most popular ICs in the IGBT market. As such, understanding its application fields and working principle is essential for any electrical engineer.
The STGB30H65FB is a heavyweight in the markets of motor control and power conversion. Since it is configured as an open-drain NPN-type device, the STGB30H65FB is ideally suited for applications in which other types of power switches have been proven to be inadequate. The STGB30H65FB is an extremely effective component in applications that require switching frequency ranges of 5kHz-50kHz, such as control of electric motors, solenoids, relays and lamps.
The working principle of the STGB30H65FB is the same as any NPN Insulated Gate Bipolar Transistor (IGBT). Applying a positive voltage to the gate controls the current flow across the device. A positive voltage will cause the IGBT to turn “on” while a negative voltage will turn the device “off”. The IGBT\'s collector current can be controlled with a signal that has very low power consumption.
The STGB30H65FB has a voltage rating of 650V with a peak current rating of 30A. The maximum power dissipation is equal to 500. The collector-emitter saturation voltage of the device is 1V. This means that the device can sustain a high amount of current without losing its hold capability. In other words, the device can be used for a wide range of power switching applications.
The STGB30H65FB is a pin-to-pin compatible replacement of several well-known IGBT families, such as the I8C, I5C and S5C. This makes it ideal for applications in which only one origin NPN IGBT can be used. The device has a wide operating temperature range of -40°C to +150°C, making it suitable for use in almost any environment.
The STGB30H65FB is a very powerful and reliable Single Insulated Gate Bipolar Transistor (IGBT). It is suitable for applications that require switching frequencies of 5kHz-50kHz, with collector currents up to 30A. The device is pin-to-pin compatible with several IGBT families, and it has an operating temperature range of -40°C to +150°C, making it a highly versatile component.
The specific data is subject to PDF, and the above content is for reference
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