STGB3NB60SDT4 Allicdata Electronics
Allicdata Part #:

STGB3NB60SDT4-ND

Manufacturer Part#:

STGB3NB60SDT4

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 6A 70W D2PAK
More Detail: IGBT 600V 6A 70W Surface Mount D2PAK
DataSheet: STGB3NB60SDT4 datasheetSTGB3NB60SDT4 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.43000
10 +: $ 0.41710
100 +: $ 0.40850
1000 +: $ 0.39990
10000 +: $ 0.38700
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Switching Energy: 1.15mJ (off)
Base Part Number: STG*3NB
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Reverse Recovery Time (trr): 1.7µs
Test Condition: 480V, 3A, 1 kOhm, 15V
Td (on/off) @ 25°C: 125ns/3.4µs
Gate Charge: 18nC
Input Type: Standard
Series: PowerMESH™
Power - Max: 70W
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
Current - Collector Pulsed (Icm): 25A
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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IGBTs - Single

Integrated Gate Bipolar Transistors (IGBTs) are typically hybrid devices that combine fast-acting, power filled switching and ultra-high linear current/voltage gains. They are commonly used as switches in power electronics circuits, as they provide high power density with fast switching capabilities. Such switching capabilities make IGBTs Single devices the choice for applications such as motor drives, power supplies, lighting, motor control, power converters, etc.

The STGB3NB60SDT4 is an IGBT single device from the STMicroelectronics family of products. It is a 600V N-channel IGBT, which is especially suitable for applications in the field of automotive, power supplies and industrial applications.

Application Field

The STGB3NB60SDT4 is designed to be used in any number of industries, including automotive, railway, industrial and medical applications. In the automotive industry, it can be used for motor control, and for electric/hybrid vehicles, it is suitable for driving and switching electric traction motors. In railway applications, it can be used for applications such as train control and cabin lighting. In the industrial and medical industries, it can be used for a range of applications such as industrial motor drives, AC/DC converters and medical imaging systems.

Working Principle

The working principle of an IGBT single device is very similar to that of a metal-oxide semiconductor field-effect transistor (MOSFET). An IGBT is essentially a MOSFET in which both the drain and the gate terminals are connected to the same bias voltage. The device operates in two modes: on-state and off-state. In the on-state, the gate voltage is positive. This causes the charge carriers injected into the drain region to produce a channel between the emitter and the collector. This channel is blocked when the gate voltage is negative. The on resistance of an IGBT is usually lower than that of a MOSFET, which makes it more suitable for applications that require higher current carrying capabilities.

In applications where a low-current and high-voltage device is required, a single IGBT can be used. A single IGBT can provide both high-current and high-voltage switching capabilities. Such applications include power electronics circuits, motor control, and lighting. The low-current and high-voltage capability of the IGBT single device makes it the preferred choice for applications requiring switching at high current levels.

Conclusion

The STGB3NB60SDT4 is a 600V N-channel IGBT single device from the STMicroelectronics family of products. It is used in a variety of industrial and medical applications, including motor control, power electronics circuitry, AC/DC converters and medical imaging systems. This device operates in two modes: on-state and off-state, and has a lower on-resistance than a MOSFET, making it more suitable for applications requiring higher current capacities. It is a reliable, cost-effective, and easy-to-use device for applications that need both high-current and high-voltage switching capabilities.

The specific data is subject to PDF, and the above content is for reference

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