STGB20M65DF2 Allicdata Electronics
Allicdata Part #:

STGB20M65DF2-ND

Manufacturer Part#:

STGB20M65DF2

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT TRENCH 650V 40A D2PAK
More Detail: IGBT Trench Field Stop 650V 40A 166W Surface Mount...
DataSheet: STGB20M65DF2 datasheetSTGB20M65DF2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.90000
10 +: $ 0.87300
100 +: $ 0.85500
1000 +: $ 0.83700
10000 +: $ 0.81000
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Switching Energy: 140µJ (on), 560µJ (off)
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 166ns
Test Condition: 400V, 20A, 12 Ohm, 15V
Td (on/off) @ 25°C: 26ns/108ns
Gate Charge: 63nC
Input Type: Standard
Series: M
Power - Max: 166W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Current - Collector Pulsed (Icm): 80A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 650V
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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A STGB20M65DF2 is a power transistor device in a single insulated-gate bipolar transistor (IGBT) package that is used in many different types of electrical systems. This type of device has a number of advantages over other conventional transistors and is commonly used in power supply switch-mode circuits such as inverters, converters, and motor controllers.

The STGB20M65DF2 is a silicon-based device. It is composed of two distinct areas of material that are connected and separated by an insulation layer. The two regions are the collector and the emitter, and they are in the same physical location and can be connected together by a single wire or multiple contacts depending on the application.

The working principle behind the STGB20M65DF2 is that when an input voltage is applied to the gate, a current is generated in the collector and emitter that flows in opposite directions. This current induces a magnetic field in the gap between the two electrodes, which is what causes the output voltage to change.

The STGB20M65DF2 is typically used in power switching applications where it is important to have a fast switching action and low power dissipation. It is commonly used in applications that require high speed switching such as DC-DC converters, UPS systems, lighting and solar applications, motor controllers, and inverters.

The STGB20M65DF2 is designed with a low on-state resistance which helps reduce conduction losses, making it more efficient than other types of transistors. This device also has a high breakdown voltage rating and is capable of withstanding large levels of reverse bias due to its excellent self-protection features.

The STGB20M65DF2 is also designed to have a wide safe operating temperature range which makes it suitable for use in a variety of environments. Its small physical size and simple design also makes it easy to install and maintain, making it a popular choice in many industrial and consumer applications.

Overall, the STGB20M65DF2 is a versatile and reliable power transistor device that is suitable for use in many different power switching applications. It is known for its low power dissipation and high switching speed, making it a popular choice for applications such as DC-DC converter, UPS systems, lighting and solar applications, motor controllers, and inverters.

Its small size, simple design, and wide temperature range make it an ideal choice for those who need an efficient and reliable power switch for their systems. It is an effective solution for many power switching applications, offering excellent performance and reliability in many different demanding environments.

The specific data is subject to PDF, and the above content is for reference

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