STGB19NC60KDT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-7007-2-ND |
Manufacturer Part#: |
STGB19NC60KDT4 |
Price: | $ 1.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 35A 125W D2PAK |
More Detail: | IGBT 600V 35A 125W Surface Mount D2PAK |
DataSheet: | STGB19NC60KDT4 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1000 +: | $ 1.70217 |
Switching Energy: | 165µJ (on), 255µJ (off) |
Base Part Number: | STG*19NC |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 31ns |
Test Condition: | 480V, 12A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 30ns/105ns |
Gate Charge: | 55nC |
Input Type: | Standard |
Series: | PowerMESH™ |
Power - Max: | 125W |
Vce(on) (Max) @ Vge, Ic: | 2.75V @ 15V, 12A |
Current - Collector Pulsed (Icm): | 75A |
Current - Collector (Ic) (Max): | 35A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The STGB19NC60KDT4 is a 600V N-channel IGBT (Insulated Gate Bipolar Transistor) in a single package. It has a maximum current rating of 19A and a minimum operating temperature of -55°C. The IGBT has been designed for a variety of applications, such as motor control, welding, and switching, and is widely used in consumer electronics and industrial applications. This article will provide an overview of the STGB19NC60KDT4, its application field and working principle.
Features of STGB19NC60KDT4
The STGB19NC60KDT4 is an N-channel IGBT, which means it is made of n-type semiconductor material. It has a gate voltage maximum rating of +/-20V, a drain source voltage maximum rating of 600V, and a maximum current rating of 19A. The STGB19NC60KDT4 has a minimum operating temperature of -55°C, making it suitable for a variety of cold-weather applications. It also features a low on-state voltage drop, high switching speed, and low switching losses.
Application Field
The STGB19NC60KDT4 is suitable for a variety of motor control, welding and switching applications. It is the ideal choice for applications that require a high voltage, high current device with low switching losses, such as heating, ventilation, and air conditioning (HVAC) systems. The IGBT is also well-suited for use in UPS systems, motor controls, and welding machines. Furthermore, due to its low on-state voltage drop and high switching speed, the STGB19NC60KDT4 is ideal for use in consumer electronics, such as laptop and desktop computers.
Working Principle of STGB19NC60KDT4
The SGTB19NC60KDT4 is an insulated gate bipolar transistor that operates based on unevenPn junctions. It consists of n-type and p-type semiconductor materials, which are separated by an insulating layer known as oxide. The transistor is controlled by a “gate” voltage, which is applied to the oxide layer and creates an electric field, allowing the carriers (electrons) to flow from the n-type material to the p-type material. This current flow allows for the transistor to amplify or switch a current. The STGB19NC60KDT4 has an advantage over other transistor types, as it has higher current ratings and can operate at higher voltages.
In summary, the STGB19NC60KDT4 is a 600V N-channel IGBT that is well-suited for applications requiring high voltages and currents, such as motor control, welding and switching. It has a maximum current rating of 19A and a minimum operating temperature of -55°C. The IGBT features a low on-state voltage drop and high switching speed, and is commonly used in HVAC systems, UPS systems, motor controllers, welding machine, and consumer electronics. Additionally, the STGB19NC60KDT4 operates based on unevenPn junctions, where an electric field is maintained between two semiconductor materials separated by an oxide layer.
The specific data is subject to PDF, and the above content is for reference
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