STGB19NC60HDT4 Allicdata Electronics
Allicdata Part #:

497-6026-2-ND

Manufacturer Part#:

STGB19NC60HDT4

Price: $ 0.81
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 40A 130W D2PAK
More Detail: IGBT 600V 40A 130W Surface Mount D2PAK
DataSheet: STGB19NC60HDT4 datasheetSTGB19NC60HDT4 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.81000
10 +: $ 0.78570
100 +: $ 0.76950
1000 +: $ 0.75330
10000 +: $ 0.72900
Stock 1000Can Ship Immediately
$ 0.81
Specifications
Switching Energy: 85µJ (on), 189µJ (off)
Base Part Number: STG*19NC
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 31ns
Test Condition: 390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C: 25ns/97ns
Gate Charge: 53nC
Input Type: Standard
Series: PowerMESH™
Power - Max: 130W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The STGB19NC60HDT4 is an Insulated Gate Bipolar Transistor (IGBT) from the STGB19N series, produced by STMicroelectronics and classified as being a Single type. An IGBT is a type of Bi-directional semiconductor similar to a regular MOSFET (metal-oxide-semiconductor field-effect transistor) but with a voltage compatibility between its Emitter and Collector.

This device has a maximum collector current of 1.6 amps, a collector-emitter voltage of 600 volts, and a collector-emitter saturation voltage of 2.1 volts. The maximum operating temperature is 175°C, with a current gain of 600 minimum at -10V and 50A. It also offers an ELEC gate drive of 10V, with a minimum switching energy of 1.2µJ, a maximum frequency of 200kHz, and an EOn of 1.5mΩ.

The STGB19NC60HDT4 is suitable for a wide range of applications, such as Automotive, Industrial and Power Supplies. It is mainly used in motor control systems and in the power control section of any electronic device. It can also be used in motor control drives and insulated gate drivers, as well as for AC and DC applications. The IGBT is also popular for its power efficiency, as it requires less power than most other devices with comparable performance.

The working principle of an IGBT is quite simple, yet very effective. It combines the features of a bipolar transistor and a MOSFET to provide the best of both worlds in terms of power efficiency. In the device, current is enabled through the base (a voltage applied here will cause current to flow). Once the current is enabled, it passes through the transistor and is then controlled by the gate (a voltage applied to the gate will modulate the current). This type of switch also has a lower \'on\' resistance than traditional switches, which helps to provide a more efficient power consumption.

The STGB19NC60HDT4 is a reliable and efficient device, capable of providing superior performance in a wide range of applications. It offers high switching frequency, low input capacitance, and high switching times. With a wide range of features and benefits, it is the perfect choice for users looking for a single IGBT for their applications.

The specific data is subject to PDF, and the above content is for reference

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