STGB35N35LZ-1

Power - Max:	176W
Base Part Number:	STG*35N
Supplier Device Package:	I2PAK
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	300V, 15A, 5V
Td (on/off) @ 25°C:	1.1µs/26.5µs
Gate Charge:	49nC
Input Type:	Logic
Switching Energy:	--
Series:	PowerMESH™
Vce(on) (Max) @ Vge, Ic:	1.7V @ 4.5V, 15A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	345V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to STGB35N35LZ-1
STGB35N35LZ-1 (Single IGBT35) is an enhancement-mode, low on-state voltage, vertical-structure, Insulated Gate Bipolar Transistor (IGBT). It is an ideal device for general use in switching and rectification applications, consisting of a high speed, an anti-parallel Connected diode for switching and a vertical Collector-Emitter(C-E) level structure. It provides high frequency, high reliability, low on-state loss and good switching performance. This particular device features a low gate charge design, which is suitable for low speed applications.Application Field of STGB35N35LZ-1
STGB35N35LZ-1 has a wide range of applications that including but not limited to: audio and lighting, automotive industry, consumer electronics, industrial automation and robotics, Medical equipment, telecommunications and other power electronic devices. It can be used in switching DC/DC converters, AC/DC converters and inverters, switching power supplies, AC or DC motor control, Power Factor Correction (PFC) circuits, as well as any other special applications that are requiring fast turn-on and/or turn-off currents.Working Principle of STGB35N35LZ-1
As an Insulated Gate Bipolar Transistor (IGBT), STGB35N35LZ-1 works by allowing the current flow between Collector and Emitter through the vertical level structure. By applying a voltage to the Gate electrode, the current flow between Collector and Emitter is turned on or off. It works on an engineering principle known as ‘forward or reverse bias’, which is the same mechanism used by conventional transistors.An IGBT combines the advantages of MOSFETs switching and low on-state voltage losses with low saturation voltages of bipolar junction transistors (BJTs). Usually, its on-state voltage loss is about one-third lower than that of BJTs for the same rated current. The total voltage drop on an IGBT is composed of the on-state voltage drop and the avalanche energy. The on-state voltage drop is affected by the on-state current, frequency of switching, load and other characteristics. Generally, higher frequency of switching and load can bring higher on-state voltage drops.The avalanche energy is not affected by any mentioned parameters and it is the uppermost limit for the total on-state voltage drop. This is why the maximum worse-case voltage drop is always set higher than the nominal voltage drop.Conclusion
STGB35N35LZ-1 is a versatile single IGBT with a wide range of application due to its high speed, anti-parallel Connected diode and low on-state losses. The low gate charge design makes it suitable for low speed applications. It works by controlling the current between the Collector and Emitter electrodes and it is driven by the forward and reverse bias principle. Its total on-state voltage drop is composed of the on-state voltage drop and the avalanche energy.

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