Allicdata Part #: | 497-10120-2-ND |
Manufacturer Part#: |
STGB35N35LZT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 345V 40A 176W D2PAK |
More Detail: | IGBT 345V 40A 176W Surface Mount D2PAK |
DataSheet: | STGB35N35LZT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | -- |
Base Part Number: | STG*35N |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 300V, 15A, 5V |
Td (on/off) @ 25°C: | 1.1µs/26.5µs |
Gate Charge: | 49nC |
Input Type: | Logic |
Series: | PowerMESH™ |
Power - Max: | 176W |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 4.5V, 15A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 345V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Single IGBTs are one of the most commonly used switching devices in the electronics industry due to their low power consumption, high power density, and fast switching times.
The STGB35N35LZT4 is one of a wide range of IGBTs available on the market and is used for a variety of applications. It has an active voltage (VCE) of 35V, along with an IC value of 7.5A at Tc = 25 degrees Celsius. STGB35N35LZT4 also has a Collector-Emitter breakdown voltage (BVceo) of 35V and a maximumin saturated Collector Emitter Voltage (VCESAT) of 3-4V.
The primary application for the STGB35N35LZT4 is in Power Conversion Systems such as Voltage Inverters and Uninteruptible Power Supplies (UPS). Such systems require high performance switching devices that can provide reliable and efficient power conversion. IGBTs, including the STGB35N35LZT4, are highly suitable for such an application due to their ability to switch rapidly with minimal losses and low voltage drop.
The working principle of the STGB35N35LZT4 is based on the use of a juncture field-effect transistor (JFET). It consists of an N-channel JFET that is connected between the collector and emitter terminals. The gate voltage is used to control the current that is flowing between the collector and emitter. This is done by changing the resistance between the collector and emitter. When the voltage is increased, the resistance decreases and the current increases. Conversely, when the voltage is decreased, the resistance increases and the current decreases.
The STGB35N35LZT4 is ideal for high-frequency, high-power applications such as computer power supplies, solar energy systems, and electric car controllers. Its low voltage drop and fast switching times make it highly efficient for those applications. Its higher voltage ratings are also ideal for industrial applications such as process control, automotive, and welding.
The STGB35N35LZT4 is also highly reliable due to its wide operating temperature range, very low leakage current, and fast switching speeds. Additionally, it has a high surge current capability, making it suitable for motor starters, welding equipment, and other high-power applications.
In conclusion, the STGB35N35LZT4 is a single IGBT that is most appropriately used for power conversion systems such as voltage inverters and UPS systems. It has low power consumption and fast switching speeds, along with a wide voltage range, making it suitable for various applications. Additionally, its high power density and reliability make it suitable for high-power applications such as motors, pumps, and welding equipment.
The specific data is subject to PDF, and the above content is for reference
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