STGD10NC60KT4 Allicdata Electronics

STGD10NC60KT4 Discrete Semiconductor Products

Allicdata Part #:

STGD10NC60KT4-ND

Manufacturer Part#:

STGD10NC60KT4

Price: $ 0.72
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 20A 60W DPAK
More Detail: IGBT 600V 20A 60W Surface Mount D-Pak
DataSheet: STGD10NC60KT4 datasheetSTGD10NC60KT4 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2500 +: $ 0.65637
Stock 1000Can Ship Immediately
$ 0.72
Specifications
Power - Max: 60W
Base Part Number: STG*10NC
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 390V, 5A, 10 Ohm, 15V
Td (on/off) @ 25°C: 17ns/72ns
Gate Charge: 19nC
Input Type: Standard
Switching Energy: 55µJ (on), 85µJ (off)
Series: PowerMESH™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Current - Collector Pulsed (Icm): 30A
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The STGD10NC60KT4 is an IGBT transistor which is a type of switching device that is used for interfacing between high voltage and low voltage circuits. It is classified as a single transistor, and is generally used in low to medium power applications. The STGD10NC60KT4 is designed to handle high voltages of up to 600V, and can operate in any environment with a temperature range of -40 to +175°C.The IGBT has two primary components: the Gate and the Collector. The Gate of the IGBT transistor controls whether or not current can flow through the transistor. When the Gate is closed, the Collector will be open allowing current to flow between the Drain and Source of the transistor. However, when the Gate is open, no current will flow as the Collector will be blocked. The Gate voltage is the important parameter for controlling the on/off state of the IGBT transistor and the Gate voltage must be higher than the Drain voltage before current can flow through the transistor.When the IGBT gate is first opened, the voltage across the Collector and Emitter region of the device is very low and requires an external supply to bring it up to the required Gate voltage. This is usually done using a DC to DC converter, which can be connected to either the Gate or the Drain. Once the Gate voltage reaches the threshold voltage, the Collector and Emitter will be in a high-impedance state and current can flow. In this state, the IGBT functions as a switch, allowing current to flow freely between the Drain and Source.The STGD10NC60KT4 is suitable for a wide range of applications due to its impressive features. Its low gate-emitter capacitance makes switching faster and is ideal for switching power supplies. In addition, its high blocking voltage, low thermal resistance, and low gate drive power make it an ideal switch for high-power applications. Some of the most common applications of the STGD10NC60KT4 include motor drives, power conditioning, lighting, and solar inverter systems.Overall, the STGD10NC60KT4 is a robust and reliable IGBT transistor with excellent features. It is a great choice for power conditioning, motor drives, lighting, and solar inverter systems that require high levels of efficiency and reliability. It is designed to handle high voltages and has a low gate-emitter capacitance that makes switching faster. With its impressive features, the STGD10NC60KT4 can make any application run more efficiently and reliably.

The specific data is subject to PDF, and the above content is for reference

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