Allicdata Part #: | STGD7NB120S-1-ND |
Manufacturer Part#: |
STGD7NB120S-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 1200V 10A 55W IPAK |
More Detail: | IGBT 1200V 10A 55W Through Hole I-PAK |
DataSheet: | STGD7NB120S-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Switching Energy: | 15mJ (off) |
Base Part Number: | STG*7NB |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Test Condition: | 960V, 7A, 1 kOhm, 15V |
Td (on/off) @ 25°C: | 570ns/- |
Gate Charge: | 29nC |
Input Type: | Standard |
Series: | PowerMESH™ |
Power - Max: | 55W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 7A |
Current - Collector Pulsed (Icm): | 20A |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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STGD7NB120S-1 Integrated Gate Bipolar Transistor (IGBT) offers an excellent balance of conduction and switching performance, making these discrete IGBTs suitable for a wide range of motion control, UPS and switching power supply applications. This single IGBT device is designed as a large current at low voltage switch, and designed to minimize losses in power devices and switching applications.The STGD7NB120S-1 IGBT is designed to provide reliable and efficient performance in inverter applications by combining high switching speed in on-state voltage properties. This device can be used in a wide range of applications, including motor drives, uninterruptible power supplies, power converters, and systems that require rapid switching over a wide range of power levels to meet its needs. The STGD7NB120S-1 is an IGBT single device with a voltage rating of 600 volts and an output current of 8 Amps. This device provides high-speed switching with a low on-state voltage drop and a very low safe operating area (SOA). It also provides high efficiency due to low on-state gate charge. The gate-emitter area provides high current and fast switching operation, enabling fast switching frequencies and low voltage switching. The device has a junction temperature range of -40°C to 150°C and is designed to meet EN60950-1 standards. Its low on-state voltage drop makes it ideal for applications where a higher efficiency is desired. It also offers exceptional switching speed, as well as low leakage current and low gate charge.The STGD7NB120S-1 is a good choice to provide high current switching capability with excellent switching performance. The low on-state voltage drop ensures that the device runs at a lower power level and can offer long lifetime performance. It is also capable of handling high temperatures and humidity, which makes it suitable for a variety of industrial applications. In addition, it is highly robust and can withstand a wide range of electrical conditions.To understand how STGD7NB120S-1 works, we should first look at its structure. The STGD7NB120S-1 is composed of three connected semiconductor layers. The Gate layer, which is in contact with the Control Gate, is used to control the on and off state of the IGBT. By changing the voltage of this layer, the device can be switched on or off. The N-Channel layer provides the collector-emitter conduction, while the P-Channel layer provides the emitter-collector conduction. When the Gate voltage is decreased, the IGBT turns on and electrical current flows through the N-Channel layer to the P-Channel and eventually to ground. When the voltage is increased, the IGBT turns off and prevents current flow.The switching speed of the STGD7NB120S-1 is extremely fast, and is capable of reaching speeds up to 25 kHz depending on the application. Its operating temperature range is -40°C to 150°C and it can sustain repetitive avalanche energy with no degradation. Its gate charge is also very low, allowing for faster switching and excellent efficiency.In summary, the STGD7NB120S-1 is highly suitable for a wide range of applications, such as motor drives, uninterruptible power supplies, power converters, and systems that require rapid switching over a wide range of power levels. It is an excellent choice for applications where an efficient and reliable operation is required. It is capable of operating at high temperatures and is less susceptible to wear and tear, making it an ideal choice for numerous industrial applications.
The specific data is subject to PDF, and the above content is for reference
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