STGD5NB120SZ-1

Series:	PowerMESH™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	10A
Current - Collector Pulsed (Icm):	10A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 5A
Power - Max:	75W
Switching Energy:	2.59mJ (on), 9mJ (off)
Input Type:	Standard
Td (on/off) @ 25°C:	690ns/12.1µs
Test Condition:	960V, 5A, 1 kOhm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Base Part Number:	STG*5NB

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The STGD5NB120SZ-1 is a single gate insulated gate bipolar transistor (IGBT). It is one of the semiconductor components in the range of IGBTs offered by STMicroelectronics, an Italian multinational electronics and semiconductor manufacturer. IGBTs are used in many applications, such as motor control and drive, switching power supplies, industrial drives, UPS systems, solar inverters, etc. and they are usually smaller, more compact and more efficient than traditional thyristors. This transistor is designed for high-power switching applications and power supply circuits. It features superior reverse recovery characteristics and is suitable for high switching frequencies.The STGD5NB120SZ-1 is a N-channel device. It has a typical drain-source voltage of 1200V (VDS) and an avalanche energy of 440mJ (EAS). The maximum continuous drain current (ID) is 120 A, and the maximum peak drain current (IDM) is 210A. It has a gate threshold voltage (VGS) of ±20V to ±20.5V and a typical gate control voltage (VGE) of 10V. Its input capacitance (Ciss) is 587.5 pF, and its output capacitance (Coss) is 224 pF.The STGD5NB120SZ-1 is typically used in motor drive and switching power supply applications. When used in a motor drive or other power supply application, the transistor acts as a switch or amplifier between the source and the load, allowing current to flow when the signal applied to the gate is at the correct level.The operation of the transistor can be broken down into the three basic states: Off State, Forward Conduction State and Reverse Conduction State.In the Off State, no current flows through the device until a gate voltage greater than the threshold voltage (VGS) is applied. This causes the transistor to “turn on” and current will start to flow through the device.In the Forward Conduction State, the transistor can act as either a switch, where it will pass current to the load, or an amplifier, where its gain or conductance is determined by the gate voltage and the current being passed.In the Reverse Conduction State, the transistor will turn off when the gate voltage or current is greater than a certain level. This is referred to as the reverse avalanche energy (EAS) of the device.The STGD5NB120SZ-1 is an ideal choice for power supply, motor drive and switching applications. Its superior reverse recovery characteristics and high switching frequencies make it a powerful and reliable device for these applications. Its N-channel design and low on-state resistance make it an efficient and cost effective device for these applications.

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