Allicdata Part #: | 497-8896-2-ND |
Manufacturer Part#: |
STGDL6NC60DIT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 13A 50W DPAK |
More Detail: | IGBT 600V 13A 50W Surface Mount D-Pak |
DataSheet: | STGDL6NC60DIT4 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Switching Energy: | 32µJ (on), 24µJ (off) |
Base Part Number: | STG*6NC |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 23ns |
Test Condition: | 390V, 3A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 6.7ns/46ns |
Gate Charge: | 12nC |
Input Type: | Standard |
Series: | PowerMESH™ |
Power - Max: | 50W |
Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 3A |
Current - Collector Pulsed (Icm): | 18A |
Current - Collector (Ic) (Max): | 13A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A STGDL6NC60DIT4 is an insulated gate bipolar transistor (IGBT), in the single transistor category. IGBTs provide efficient switching from a low-power state to a high-power state, making them particularly well-suited to power regulation applications, such as DC/DC converters, power supplies, and solar inverters. The STGDL6NC60DIT4 has a maximum repetitive off-state voltage of 600 volts (V), blocking six hundred volts of alternating current (AC). It is also capable of handling 600 volts of direct current (DC).
The STGDL6NC60DIT4 has a maximum current rating of 6 amps (A). This type of transistor is designed to convert AC input to a regulated DC output. It is often used in applications that require high power but low dissipation. Its ability to regulate power over long distances makes it useful in telecommunications and power supplies.
The STGDL6NC60DIT4\'s working principle is based on field-effect transistor (FET) technology, with an insulated gate. Its construction consists of a thinned silicon layer (the gate) and a silicon dioxide layer (the insulation), placed between two PN junctions, or diodes. The PN junctions are connected to a source and drain respectively, allowing for current flow. The gate, when energized, is used to control the voltage between the PN junctions, with a depletion of charge carriers occurring when the gate is in an OFF state. When the gate is in an ON state, current flows between the PN junction terminals and a voltage drop occurs.
The STGDL6NC60DIT4 is popular in many applications where high power and low dissipation, such as lighting, power supplies, and inverters. In these applications, the transistor is advantageous because it allows for efficient power conversion at low cost and heat generation. Additionally, it is a great choice for power regulation of appliances, electronics, and motor controllers. The STGDL6NC60DIT4 is commonly used in solar inverters for efficient power conversion, as the transistor can be switched on and off quickly and with precision, saving energy.
In summary, the STGDL6NC60DIT4 is a single insulated gate bipolar transistor in the IGBT category. It is capable of handling 600V of AC or DC, with a maximum current rating of 6 amps. The STGDL6NC60DIT4 works on the principle of FET technology, with an insulated gate controlling the voltage between PN junctions. This type of transistor is popular in high power, low dissipation applications such as lighting, power supplies, and solar inverters. Additionally, it is ideal for power regulation of appliances, electronics, and motor controllers.
The specific data is subject to PDF, and the above content is for reference
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