STGDL6NC60DIT4 Allicdata Electronics
Allicdata Part #:

497-8896-2-ND

Manufacturer Part#:

STGDL6NC60DIT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 13A 50W DPAK
More Detail: IGBT 600V 13A 50W Surface Mount D-Pak
DataSheet: STGDL6NC60DIT4 datasheetSTGDL6NC60DIT4 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 32µJ (on), 24µJ (off)
Base Part Number: STG*6NC
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 23ns
Test Condition: 390V, 3A, 10 Ohm, 15V
Td (on/off) @ 25°C: 6.7ns/46ns
Gate Charge: 12nC
Input Type: Standard
Series: PowerMESH™
Power - Max: 50W
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Current - Collector Pulsed (Icm): 18A
Current - Collector (Ic) (Max): 13A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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A STGDL6NC60DIT4 is an insulated gate bipolar transistor (IGBT), in the single transistor category. IGBTs provide efficient switching from a low-power state to a high-power state, making them particularly well-suited to power regulation applications, such as DC/DC converters, power supplies, and solar inverters. The STGDL6NC60DIT4 has a maximum repetitive off-state voltage of 600 volts (V), blocking six hundred volts of alternating current (AC). It is also capable of handling 600 volts of direct current (DC).

The STGDL6NC60DIT4 has a maximum current rating of 6 amps (A). This type of transistor is designed to convert AC input to a regulated DC output. It is often used in applications that require high power but low dissipation. Its ability to regulate power over long distances makes it useful in telecommunications and power supplies.

The STGDL6NC60DIT4\'s working principle is based on field-effect transistor (FET) technology, with an insulated gate. Its construction consists of a thinned silicon layer (the gate) and a silicon dioxide layer (the insulation), placed between two PN junctions, or diodes. The PN junctions are connected to a source and drain respectively, allowing for current flow. The gate, when energized, is used to control the voltage between the PN junctions, with a depletion of charge carriers occurring when the gate is in an OFF state. When the gate is in an ON state, current flows between the PN junction terminals and a voltage drop occurs.

The STGDL6NC60DIT4 is popular in many applications where high power and low dissipation, such as lighting, power supplies, and inverters. In these applications, the transistor is advantageous because it allows for efficient power conversion at low cost and heat generation. Additionally, it is a great choice for power regulation of appliances, electronics, and motor controllers. The STGDL6NC60DIT4 is commonly used in solar inverters for efficient power conversion, as the transistor can be switched on and off quickly and with precision, saving energy.

In summary, the STGDL6NC60DIT4 is a single insulated gate bipolar transistor in the IGBT category. It is capable of handling 600V of AC or DC, with a maximum current rating of 6 amps. The STGDL6NC60DIT4 works on the principle of FET technology, with an insulated gate controlling the voltage between PN junctions. This type of transistor is popular in high power, low dissipation applications such as lighting, power supplies, and solar inverters. Additionally, it is ideal for power regulation of appliances, electronics, and motor controllers.

The specific data is subject to PDF, and the above content is for reference

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