
STGD6NC60HDT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-5112-2-ND |
Manufacturer Part#: |
STGD6NC60HDT4 |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 15A 56W DPAK |
More Detail: | IGBT 600V 15A 56W Surface Mount D-Pak |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 0.40000 |
10 +: | $ 0.38800 |
100 +: | $ 0.38000 |
1000 +: | $ 0.37200 |
10000 +: | $ 0.36000 |
Switching Energy: | 20µJ (on), 68µJ (off) |
Base Part Number: | STG*6NC |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 21ns |
Test Condition: | 390V, 3A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 12ns/76ns |
Gate Charge: | 13.6nC |
Input Type: | Standard |
Series: | PowerMESH™ |
Power - Max: | 56W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 3A |
Current - Collector Pulsed (Icm): | 21A |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Introduction
This article provides a detailed overview of the STGD6NC60HDT4 transistor and its application field, as well as its working principle. The STGD6NC60HDT4 transistor is classified as a single IGBT, which stands for Insulated Gate Bipolar Transistor.
Overview
The STGD6NC60HDT4 is a low-voltage power MOSFET device, which was developed with the Auto-Grade process for automotive applications. The device consists of an N-channel depletion mode MOSFET and is suitable for high-current switching applications. It is small in size and has an area of only 1 mm2. The drain-source voltage of this device is rated at 600 V and its maximum drain current is 80 A. Its maximum junction temperature is rated at 175 °C.
Application Field
The STGD6NC60HDT4 transistor is mainly used in applications that require very high current such as electric power systems, auto industry and heavy electric industry. The device can be used in a wide range of electric applications such as switched systems, motor controllers, automotive traction inverters, chargers, and DC-DC converters. It can also be used in multiple industrial products such as UPS, elevator systems and power supplies. Moreover, it is suitable for controlling on/off cycles in AC motor drivers and electric motors for low-voltage applications.
Working Principle
The STGD6NC60HDT4 is a single IGBT, consisting of an N-channel depletion mode MOSFET. When the gate voltage of the transistor is below the threshold voltage, it will remain in the off-state. However, when the gate voltage exceeds the threshold voltage, the device will turn on. Thus, the transistor acts as a switch, allowing current to flow when it is on and blocking current when it is off. The transistor has a very low on-resistance and a high switching speed, making it highly efficient in controlling current.
Conclusion
In conclusion, the STGD6NC60HDT4 transistor is a single IGBT device which can be used in various applications requiring high current and low voltage. The device has a low on-resistance and a very high switching speed, allowing it to be used in highly efficient current control applications. The applications for this type of device range from electric power systems to motor controllers and automotive inverters.
The specific data is subject to PDF, and the above content is for reference
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